Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-2111
Features
• Cascadable 50
Ω
Gain Block
• Medium Power:
10 dBm at 900 MHz
• High Gain:
16.5 dB Typical at 900 MHz
• Low Noise Figure:
3.3 dB Typical at 900 MHz
• Low Cost Surface Mount
Plastic Package
• Tape-and-Reel Packaging
Option Available
[1]
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Semiconduc-
tor Devices.”
Description
The MSA-2111 is a low cost silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) housed
in a surface mount plastic
SOT-143 package. This MMIC is
designed for use as a general
purpose 50
Ω
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
SOT-143 Package
Typical Biasing Configuration
R
bias
V
CC
>
5
V
RFC (Optional)
C
block
IN
MSA
C
block
OUT
V
d
= 3.6 V
5965-9663E
6-478
MSA-2111 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
40 mA
125 mW
+13 dBm
150°C
–65°C to 150°C
Thermal Resistance
[2]
:
θ
jc
= 505°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 2.0 mW/°C for T
C
> 85°C.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 29 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 to 2.5 GHz
f = 0.1 to 2.5 GHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 0.1 to 0.3 GHz
Units
dB
dB
GHz
Min.
16.0
Typ.
17.5
±
0.5
0.5
1.8:1
1.8:1
Max.
dB
dBm
dBm
psec
V
mV/°C
2.9
3.3
10
20
158
3.6
–8.0
4.3
Notes:
1. The recommended operating current range for this device is 12 to 35 mA. Typical gain performance as a function of
current is on the following page.
Part Number Ordering Information
Part Number
MSA-2111-TR1
MSA-2111-BLK
No. of Devices
3000
100
Container
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-479
MSA-2111 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 29 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
.28
.26
.24
.21
.18
.15
.13
.11
.09
.07
.08
.11
.15
.27
.38
.46
171
163
156
152
149
148
148
152
158
169
–123
–124
–167
158
145
135
23.0
22.5
21.9
21.2
20.5
19.7
19.0
18.3
17.6
16.9
14.0
11.8
10.1
8.3
6.8
5.6
14.1
13.4
12.5
11.5
10.6
9.7
8.9
8.2
7.6
7.0
5.0
3.9
3.2
2.6
2.2
1.9
167
156
145
136
128
120
114
108
102
98
79
63
56
43
32
21
–26.0
–25.5
–24.9
–24.0
–23.4
–22.6
–21.8
–21.1
–20.4
–19.9
–17.3
–15.5
–14.3
–13.5
–13.1
–12.6
.050
.053
.057
.063
.068
.074
.081
.088
.095
.101
.136
.167
.193
.211
.222
.234
9
18
25
30
35
38
40
42
43
44
45
42
43
38
34
30
.27
.27
.26
.26
.24
.24
.22
.21
.20
.19
.10
.06
.06
.12
.16
.17
177
175
173
171
170
169
169
169
168
169
179
–147
–177
149
145
144
1.03
1.03
1.03
1.03
1.03
1.03
1.04
1.04
1.04
1.05
1.06
1.08
1.10
1.13
1.14
1.14
Typical Performance, T
A
= 25°C
(unless otherwise noted)
25
22
20
19 Gain Flat to DC
G
P
(dB)
G
P
(dB)
25
0.1 GHz
0.5 GHz
0.9 GHz
15
P
1 dB
(dBm)
14
12
16
13
10
10
10
2.0 GHz
8
5
7
4
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
0
10
15
20
25
I
d
(mA)
30
6
0.1
0.2
0.3
0.5
1.0
2.0
FREQUENCY (GHz)
Figure 1. Power Gain vs. Frequency,
I
d
= 29 mA.
Figure 2. Power Gain vs. Current.
Figure 3. Output Power at 1 dB Gain
Compression vs. Frequency,
I
d
= 29 mA.
4.0
3.5
NF (dB)
3.0
2.5
0.1
0.2
0.3
0.5
1.0
2.0
FREQUENCY (GHz)
Figure 4. Noise Figure vs. Frequency,
I
d
= 29 mA.
6-480
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