EEWORLDEEWORLDEEWORLD

Part Number

Search

BCW60BRTC

Description
Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size45KB,2 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

BCW60BRTC Overview

Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon

BCW60BRTC Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-based maximum capacity4.5 pF
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Maximum off time (toff)800 ns
Maximum opening time (tons)150 ns
VCEsat-Max0.55 V
Base Number Matches1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号