50MT060WHTA datasheet, PDF - EEWORLD Datasheet

50MT060WHTA: DescriptionInsulated Gate Bipolar Transistor, 114A I(C), 600V V(BR)CES, N-Channel, MTP, 13 PIN; CategoryDiscrete semiconductor The transistor; File Size140KB，7 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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50MT060WHTA Overview

Insulated Gate Bipolar Transistor, 114A I(C), 600V V(BR)CES, N-Channel, MTP, 13 PIN

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-XUFM-X13
Contacts	13
Reach Compliance Code	compliant
Shell connection	ISOLATED
Maximum collector current (IC)	114 A
Collector-emitter maximum voltage	600 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage	20 V
JESD-30 code	R-XUFM-X13
JESD-609 code	e0
Number of components	2
Number of terminals	13
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	658 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Base Number Matches	1

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