2SA1608Y14-A datasheet, PDF - EEWORLD Datasheet

2SA1608Y14-A: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SUPER MINIMOLD PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size307KB，4 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2SA1608Y14-A Overview

Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SUPER MINIMOLD PACKAGE-3

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	150
JESD-30 code	R-PDSO-G3
JESD-609 code	e6
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN BISMUTH
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	400 MHz
Base Number Matches	1

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