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1DI400MN-120

Description
Power Bipolar Transistor, 400A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin
CategoryDiscrete semiconductor    The transistor   
File Size169KB,5 Pages
ManufacturerFuji Electric Co., Ltd.
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1DI400MN-120 Overview

Power Bipolar Transistor, 400A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin

1DI400MN-120 Parametric

Parameter NameAttribute value
MakerFuji Electric Co., Ltd.
package instructionFLANGE MOUNT, R-PUFM-X5
Reach Compliance Codeunknown
Is SamacsysN
Maximum collector current (IC)400 A
Collector-emitter maximum voltage1200 V
ConfigurationDARLINGTON, 4 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)2000
JESD-30 codeR-PUFM-X5
Number of components1
Number of terminals5
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment3000 W
Maximum power dissipation(Abs)3000 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Maximum off time (toff)18000 ns
Maximum opening time (tons)3000 ns
Base Number Matches1
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