VS-10ETS..SPbF Series
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Vishay Semiconductors
High Voltage Surface Mount Input Rectifier Diode, 10 A
FEATURES
Base
cathode
2
• Meets MSL level 1, per
LF maximum peak of 260 °C
• Designed and qualified
JEDEC
®
-JESD 47
J-STD-020,
• Glass passivated pellet chip junction
according
to
2
3
1
TO-263AB (D
2
PAK)
1
Anode
3
Anode
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
T
j
max.
Diode variation
TO-263AB (D
2
PAK)
10 A
800 V, 1000 V, 1200 V
1.1 V
160 A
150 °C
Single die
• Input rectification
• Vishay switches and output rectifiers which are available
in identical package outlines
DESCRIPTION
The VS-10ETS..SPbF rectifier series has been optimized for
very low forward voltage drop, with moderate leakage. The
glass passivation technology used has reliable operation up
to 150 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
12.0
THREE-PHASE BRIDGE
16.0
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
10 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
10
800/1200
160
1.1
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-10ETS08SPbF
VS-10ETS10SPbF
VS-10ETS12SPbF
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1100
1300
0.5
I
RRM
AT 150 °C
mA
Revision: 12-Feb-16
Document Number: 94338
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETS..SPbF Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
10
135
160
91
130
1290
A
2
s
A
2
s
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
10 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.1
20
0.82
0.05
0.50
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient (PCB mount)
Soldering temperature
Approximate weight
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
T
S
(1)
TEST CONDITIONS
VALUES
-40 to +150
UNITS
°C
DC operation
2.5
°C/W
62
260
2
0.07
10ETS08S
°C
g
oz.
Marking device
Case style TO-263AB (D
2
PAK)
10ETS10S
10ETS12S
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
Revision: 12-Feb-16
Document Number: 94338
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETS..SPbF Series
www.vishay.com
Vishay Semiconductors
20
18
150
140
Maximum Average
Forward Power Loss (W)
10ETS.. Series
R
thJC
(DC) = 2.5 °C/W
Maximum Allowable
Case Temperature (°C)
16
14
12
10
8
6
4
2
0
130
Ø
120
110
100
90
80
Conduction angle
DC
180°
120°
90°
60°
30°
RMS limit
30°
60°
90°
120°
8
10
Ø
180°
12
Conduction period
10ETS.. Series
T
J
= 150 °C
0
2
4
6
8
10
12
14
16
0
2
4
6
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
140
130
120
110
100
90
150
10ETS.. Series
R
thJC
(DC) = 2.5 °C/W
140
130
At any rated load condition and with
rated Vrrm applied following
surge.
Initial Tj = 150°C
at 60 Hz 0.0083s
at 50 Hz 0.0100s
Maximum Allowable
Case Temperature (°C)
Peak Half Sine Wave
Forward Current (A)
120
110
100
90
80
70
60
50
Ø
Conduction period
30°
60°
90°
120°
0
2
4
6
8
10
180°
12
14
DC
16
18
VS-10ETS..S
Series
40
30
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
16
Maximum Average
Forward Power Loss (W)
14
12
10
8
6
4
2
0
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
170
150
130
110
90
70
50
30
10
0.01
VS-10ETS..S
Series
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
RMS limit
Ø
Conduction angle
10ETS.. Series
T
J
= 150 °C
0
2
4
6
8
10
0.1
1
10
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 12-Feb-16
Document Number: 94338
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETS..SPbF Series
www.vishay.com
100
Vishay Semiconductors
T
J
= 25 °C
T
J
= 150 °C
Instantaneous Forward Current (A)
10
10ETS.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
10
Z
thJC
- Transient
Thermal Impedance (°C/W)
Steady state value
(DC operation)
1
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
10ETS.. Series
0.1
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 12-Feb-16
Document Number: 94338
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETS..SPbF Series
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
10
2
E
3
T
4
S
5
12
6
S
7
TRL PbF
8
9
Vishay Semicondutors product
Current rating (10 = 10 A)
Circuit configuration:
E = single diode
Package:
T = TO-220AC
Type of silicon:
S = standard recovery rectifier
Voltage code x 100 = V
RRM
S = TO-220 D
2
PAK (SMD-220) version
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
08 = 800 V
10 = 1000 V
12 = 1200 V
9
-
PbF = Lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-10ETS08SPbF
VS-10ETS08STRRPbF
VS-10ETS08STRLPbF
VS-10ETS10SPbF
VS-10ETS10STRRPbF
VS-10ETS10STRLPbF
VS-10ETS12SPbF
VS-10ETS12STRRPbF
VS-10ETS12STRLPbF
VS-10ETS08SPbF
QUANTITY PER TUBE
50
800
800
50
800
800
50
800
800
50
MINIMUM ORDER QUANTITY
1000
800
800
1000
800
800
1000
800
800
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
13" diameter reel
Antistatic plastic tube
13" diameter reel
13" diameter reel
Antistatic plastic tube
13" diameter reel
13" diameter reel
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
Revision: 12-Feb-16
Document Number: 94338
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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