MJE13070-6203 datasheet, PDF - EEWORLD Datasheet

MJE13070-6203: DescriptionPower Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin; CategoryDiscrete semiconductor The transistor; File Size78KB，3 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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MJE13070-6203 Overview

Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Is Samacsys	N
Shell connection	COLLECTOR
Maximum collector current (IC)	5 A
Collector-based maximum capacity	250 pF
Collector-emitter maximum voltage	400 V
Configuration	SINGLE
Minimum DC current gain (hFE)	8
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	80 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	2000 ns
Maximum opening time (tons)	450 ns
VCEsat-Max	3 V
Base Number Matches	1

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