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AS4C8M16SA-6TAN

Description
Synchronous DRAM, 8MX16, 6.5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN AND LEAD FREE, PLASTIC, TSOP2-54
Categorystorage    storage   
File Size1MB,55 Pages
ManufacturerAlliance Memory
Environmental Compliance
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AS4C8M16SA-6TAN Overview

Synchronous DRAM, 8MX16, 6.5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN AND LEAD FREE, PLASTIC, TSOP2-54

AS4C8M16SA-6TAN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionTSOP2,
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time8 weeks
access modeFOUR BANK PAGE BURST
Maximum access time6.5 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PDSO-G54
length22.22 mm
memory density134217728 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of ports1
Number of terminals54
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature105 °C
Minimum operating temperature-40 °C
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
Base Number Matches1

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