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1N5709B

Description
Variable Capacitance Diode, 82pF C(T), 65V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size53KB,1 Pages
ManufacturerCobham PLC
Download Datasheet Parametric View All

1N5709B Overview

Variable Capacitance Diode, 82pF C(T), 65V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2

1N5709B Parametric

Parameter NameAttribute value
MakerCobham PLC
package instructionGLASS PACKAGE-2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Minimum breakdown voltage65 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio3.2
Nominal diode capacitance82 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor150
Maximum repetitive peak reverse voltage60 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Varactor Diode ClassificationABRUPT
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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