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SMBJ16AHE3_A/H

Description
Trans Voltage Suppressor Diode,
CategoryDiscrete semiconductor    diode   
File Size121KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SMBJ16AHE3_A/H Overview

Trans Voltage Suppressor Diode,

SMBJ16AHE3_A/H Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid8345073976
package instructionR-PDSO-C2
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time76 weeks
Date Of Intro2019-02-07
Other featuresEXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
Maximum breakdown voltage19.7 V
Minimum breakdown voltage17.8 V
Breakdown voltage nominal value18.75 V
Maximum clamping voltage26 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Maximum forward voltage (VF)3.5 V
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage16 V
Maximum reverse current1 µA
Reverse test voltage16 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature30

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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