APTMC120HM17CT3AG
Full bridge
SiC MOSFET Power Module
V
DSS
= 1200V
R
DSon
= 17mΩ max @ Tj = 25°C
I
D
= 147A @ Tc = 25°C
Application
•
Welding converters
•
Switched Mode Power Supplies
•
Uninterruptible Power Supplies
•
Motor control
Features
•
SiC Power MOSFET
- Low R
DS(on)
- High temperature performance
•
SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
AlN substrate for improved thermal performance
•
•
•
•
Benefits
•
Outstanding performance at high frequency operation
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Solderable terminals both for power and signal for
easy PCB mounting
•
Low profile
•
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
•
RoHS compliant
All multiple inputs & outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
All ratings @ T
j
= 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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1-8
APTMC120HM17CT3AG – Rev 1 May, 2016
APTMC120HM17CT3AG
Absolute maximum ratings
(per SiC MOSFET)
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
Parameter
Drain - Source Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
T
c
= 25°C
T
c
= 80°C
Max ratings
1200
147
116
300
-10/25V
17
750
Unit
V
A
V
mΩ
W
T
c
= 25°C
Electrical Characteristics
(per SiC MOSFET)
Symbol Characteristic
Zero Gate Voltage Drain Current
I
DSS
R
DS(on)
V
GS(th)
I
GSS
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
V
GS
= 0V , V
DS
= 1200V
T
j
= 25°C
V
GS
= 20V
I
D
= 100A
T
j
= 175°C
V
GS
= V
DS
, I
D
= 30mA
V
GS
= 20 V, V
DS
= 0V
Min
Typ
20
12.5
26
2.6
Max
200
17
4
1.2
Unit
µA
mΩ
V
µA
2
Dynamic Characteristics
(per SiC MOSFET)
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
R
Gint
R
thJC
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Internal gate resistance
Junction to Case Thermal Resistance
Test Conditions
V
GS
= 0V
V
DS
= 1000V
f = 1MHz
V
GS
= -5/+20V
V
Bus
= 800V
I
D
=100A
V
GS
= -2/+20V
V
Bus
= 800V
I
D
= 100A
R
L
= 8Ω ; R
G
= 10Ω
Inductive Switching
Min
Typ
5576
440
30
332
92
100
21
19
50
30
Max
Unit
pF
nC
ns
V
GS
= -5/+20V
V
Bus
= 600V
I
D
= 100A
R
G
= 10Ω
T
j
= 150°C
T
j
= 150°C
2.2
mJ
1.2
3.05
0.2
Ω
°C/W
APTMC120HM17CT3AG – Rev 1 May, 2016
Body diode ratings and characteristics
(per SiC MOSFET)
Symbol Characteristic
V
SD
t
rr
Q
rr
I
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Test Conditions
V
GS
= -5V
I
SD
= 50A
Min
T
j
= 25°C
T
j
= 175°C
Typ
4
3.5
45
812
27
Max
Unit
V
ns
nC
A
I
SD
= 100A ; V
GS
= -5V
V
R
= 800V ; di
F
/dt = 2000A/µs
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2-8
APTMC120HM17CT3AG
SiC schottky diode ratings and characteristics
(per SiC diode)
Symbol Characteristic
V
RRM
I
RRM
I
F
V
F
Q
C
C
R
thJC
Peak Repetitive Reverse Voltage
Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Total Capacitive Charge
Total Capacitance
Junction to Case Thermal Resistance
I
F
= 40A
V
R
=1200V
T
j
= 25°C
T
j
= 175°C
Tc = 100°C
T
j
= 25°C
T
j
= 175°C
70
130
40
1.5
2.2
198
186
134
0.55
Test Conditions
Min
Typ
Max
1200
400
800
1.8
3
Unit
V
µA
A
V
nC
pF
°C/W
I
F
= 40A, V
R
= 1200V
di/dt =1000A/µs
f = 1MHz, V
R
= 400V
f = 1MHz, V
R
= 800V
Temperature sensor NTC
(see application note APT0406 on www.microsemi.com).
Symbol
R
25
∆R
25
/R
25
B
25/85
∆B/B
Characteristic
Resistance @ 25°C
T
25
= 298.15 K
T
C
=100°C
R
T
=
R
25
⎡
⎛
1
1
⎞⎤
R
T
: Thermistor value at T
exp
⎢
B
25 / 85
⎜
− ⎟⎥
⎜
T
⎟
⎝
25
T
⎠⎦
⎣
T: Thermistor temperature
Min
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
Thermal and package characteristics
Symbol
V
ISOL
T
J
T
JOP
T
STG
T
C
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
M4
Package Weight
Min
4000
-40
-40
-40
-40
2
Max
175
T
J
max -25
125
125
3
110
Unit
V
°C
N.m
g
APTMC120HM17CT3AG – Rev 1 May, 2016
www.microsemi.com
3-8
APTMC120HM17CT3AG
Package outline
(dimensions in mm)
See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com
www.microsemi.com
4-8
APTMC120HM17CT3AG – Rev 1 May, 2016
APTMC120HM17CT3AG
Typical SiC MOSFET Performance Curve
Output Characteristics
200
I
DS
, Drain Source Current (A)
T
J
=25°C
Output Characteristics
200
I
DS
, Drain Source Current (A)
T
J
=175°C
150
V
GS
=20V
V
GS
=15V
150
V
GS
=20V
V
GS
=15V
100
100
50
50
0
0
1
2
3
4
V
DS
, Drain Source Voltage (V)
Norm alized R
DS(on)
vs. Tem perature
0
0
1
2
3
4
5
6
V
DS
, Drain Source Voltage (V)
Transfert Characteristics
200
R
DSon
, Drain Source ON resistance
2.25
2
1.75
1.5
1.25
1
0.75
25
50
75
100
125
150
175
T
J
, Junction Temperature (°C)
Sw itching energy vs Rg
3
V
GS
=20V
I
D
=100A
I
DS
, Drain Source Current (A)
150
T
J
=175°C
100
50
T
J
=25°C
0
2
4
6
8
10
12
V
GS
, Gate Source Voltage (V)
sw itching energy vs current
5
V
GS
=-5/20V
R
G
=10Ω
V
BUS
= 600V
T
J
= 150°C
2.5
Losses (mJ)
Eon
4
Losses (mJ)
Eon
2
V
GS
=-5/20V
I
D
= 100A
V
BUS
= 600V
T
J
= 150°C
3
2
1.5
Eof f
Eof f
1
0
0
50
100
Current (A)
150
200
1
10 12.5 15 17.5 20 22.5 25 27.5 30
Gate resistance (ohm)
Maxim um Effective Transient Thermal Im pedance, Junction to Case vs Pulse Duration
Thermal Im pedance (°C/W)
0.25
0.15
0.1
0.05
0.7
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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5-8
APTMC120HM17CT3AG – Rev 1 May, 2016
0.2
D = 0.9
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