MCP631/2/3/4/5/9
24 MHz, 2.5 mA Rail-to-Rail Output (RRO) Op Amps
Features:
•
•
•
•
•
Gain-Bandwidth Product: 24 MHz
Slew Rate: 10 V/µs
Noise: 10 nV/Hz at 1 MHz)
Low Input Bias Current: 4 pA (typical)
Ease of Use:
- Unity-Gain Stable
- Rail-to-Rail Output
- Input Range including Negative Rail
- No Phase Reversal
Supply Voltage Range: +2.5V to +5.5V
High Output Current: ±70 mA
Supply Current: 2.5 mA/ch (typical)
Low-Power Mode: 1 µA/ch
Small Packages: SOT23-5, DFN
Extended Temperature Range: -40°C to +125°C
Description:
The Microchip Technology Inc. MCP631/2/3/4/5/9
family of operational amplifiers features high gain
bandwidth product (24 MHz, typical) and high output
short-circuit current (70 mA, typical). Some also
provide a Chip Select (CS) pin that supports a
low-power mode of operation. These amplifiers are
optimized for high speed, low noise and distortion,
single-supply operation with rail-to-rail output and an
input that includes the negative rail.
This family is offered in single (MCP631), single with
CS pin (MCP633), dual (MCP632), dual with two CS
pins (MCP635), quad (MCP634) and quad with two
Chip Select pins (MCP639). All devices are fully
specified from -40°C to +125°C.
•
•
•
•
•
•
Typical Application Circuit
0A – 20 A
+5V
51.1
+
0.005
-
V
OUT
0V – 4V
MCP63X
Typical Applications:
•
•
•
•
•
•
Fast Low-Side Current Sensing
Point-of-Load Control Loops
Power Amplifier Control Loops
Barcode Scanners
Optical Detector Amplifier
Multi-Pole Active Filter
51.1
2.0 k
Design Aids:
•
•
•
•
•
SPICE Macro Models
FilterLab
®
Software
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
High Gain-Bandwidth Op Amp Portfolio
Model Family
MCP621/1S/2/3/4/5/9
MCP631/2/3/4/5/9
MCP651/1S/2/3/4/5/9
MCP660/1/2/3/4/5/9
Channels/Package
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 3, 4
Gain-Bandwidth
20 MHz
24 MHz
50 MHz
60 MHz
V
OS
(max.)
0.2 mV
8.0 mV
0.2 mV
8.0 mV
I
Q
/Ch (typ.)
2.5 mA
2.5 mA
6.0 mA
6.0 mA
2009-2014 Microchip Technology Inc.
DS20002197C-page 1
MCP631/2/3/4/5/9
Package Types
MCP631
SOIC
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
8 NC
7 V
DD
6 V
OUT
5 NC
MCP631
2x3 TDFN*
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
EP
9
8 NC
7 V
DD
6 V
OUT
5 NC
V
OUT
1
V
SS
2
V
IN
+ 3
MCP631
SOT-23-5
5 V
DD
MCP634
SOIC, TSSOP
V
OUTA
1
V
INA
- 2
V
INA
+ 3
V
DD
4
V
INB
+ 5
V
INB
- 6
V
OUTB
7
14 V
OUTD
13 V
IND
-
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
-
8 V
OUTC
4 V
IN
-
MCP632
SOIC
V
OUTA
1
V
INA
–
2
V
INA
+
3
V
SS
4
MCP632
3x3 DFN*
V
OUTA
1
V
INA
+ 3
V
SS
4
EP
9
8 V
DD
7 V
OUTB
6 V
INB
–
5 V
INB
+
V
OUT
1
V
SS
2
V
IN
+ 3
MCP633
SOT-23-6
6 V
DD
5
CS
NC 1
V
IN
– 2
V
IN
+ 3
V
SS
4
MCP633
SOIC
8 CS
7 V
DD
6 V
OUT
5 NC
8
V
DD
6
V
INB
-
5
V
INB
+
7
V
OUTB
V
INA
– 2
4 V
IN
-
MCP639
4x4 QFN*
V
OUTD
7
CS
BC
V
OUTA
CS
AD
MCP635
MSOP
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
CS
A
5
10 V
DD
9 V
OUTB
8 V
INB
-
7 V
INB
+
6 CS
B
V
OUTA
V
INA
–
V
INA
+
V
SS
CS
A
1
2
3
4
5
MCP635
3x3 DFN*
10
V
DD
16 15 14 13
V
INA
- 1
V
INA
+ 2
V
DD
3
V
INB
+ 4
5
V
INB
-
6
V
OUTB
8
V
OUTC
EP
17
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
-
9
8
7
6
V
OUTB
V
INB
-
V
INB
+
CS
B
EP
11
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
DS20002197C-page 2
2009-2014 Microchip Technology Inc.
V
IND
-
MCP631/2/3/4/5/9
1.0
1.1
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
†
Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
V
DD
– V
SS
.......................................................................6.5V
Current at Input Pins ....................................................±2 mA
Analog Inputs (V
IN
+ and V
IN
–) †† . V
SS
– 1.0V to V
DD
+ 1.0V
All other Inputs and Outputs .......... V
SS
– 0.3V to V
DD
+ 0.3V
Output Short-Circuit Current ................................ Continuous
Current at Output and Supply Pins ..........................±150 mA
Storage Temperature ...................................-65°C to +150°C
Maximum Junction Temperature ................................ +150°C
ESD protection on all pins (HBM, MM)
1 kV, 200V
††
See
Section 4.1.2 “Input Voltage and Current Limits”.
1.2
Specifications
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/3,
V
OUT
V
DD
/2, V
L
= V
DD
/2, R
L
= 2 k to V
L
and CS = V
SS
(refer to
Figure 1-2).
Parameters
Input Offset
Input Offset Voltage
Input Offset Voltage Drift
Power Supply Rejection Ratio
Input Current and Impedance
Input Bias Current
Across Temperature
Across Temperature
Input Offset Current
Common-Mode Input Impedance
Differential Input Impedance
Common Mode
Common-Mode Input Voltage Range
Common-Mode Rejection Ratio
Open-Loop Gain
DC Open-Loop Gain (large signal)
Output
Maximum Output Voltage Swing
Sym.
V
OS
V
OS
/T
A
PSRR
I
B
I
B
I
B
I
OS
Z
CM
Z
DIFF
V
CMR
CMRR
Min.
-8
—
61
—
—
—
—
—
—
V
SS
0.3
63
66
Typ.
±1.8
±2.0
76
4
100
1500
±2
10
13
||9
10
13
||2
—
78
81
115
124
—
—
±85
±70
—
2.5
Max.
+8
—
—
—
—
5000
—
—
—
V
DD
1.3
—
—
—
—
V
DD
20
V
DD
40
±130
±110
5.5
3.6
Units
mV
Conditions
µV/°C T
A
= -40°C to +125°C
dB
pA
pA
pA
pA
||pF
||pF
V
dB
dB
dB
dB
mV
mV
mA
mA
V
mA
No Load Current
Note 1
V
DD
= 2.5V, V
CM
= -0.3V to 1.2V
V
DD
= 5.5V, V
CM
= -0.3V to 4.2V
V
DD
= 2.5V, V
OUT
= 0.3V to 2.2V
V
DD
= 5.5V, V
OUT
= 0.3V to 5.2V
V
DD
= 2.5V, G = +2,
0.5V Input Overdrive
V
DD
= 5.5V, G = +2,
0.5V Input Overdrive
V
DD
= 2.5V
(Note
2)
V
DD
= 5.5V
(Note
2)
T
A
= +85°C
T
A
= +125°C
A
OL
88
94
V
OL
, V
OH
V
SS
+ 20
V
SS
+ 40
Output Short-Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Note 1:
2:
I
SC
I
SC
V
DD
I
Q
±40
±35
2.5
1.2
See
Figure 2-5
for temperature effects.
The I
SC
specifications are for design guidance only; they are not tested.
2009-2014 Microchip Technology Inc.
DS20002197C-page 3
MCP631/2/3/4/5/9
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
V
DD
/2, V
L
= V
DD
/2, R
L
= 2 k to V
L
, C
L
= 50 pF and CS = V
SS
(refer to
Figure 1-2).
Parameters
AC Response
Gain-Bandwidth Product
Phase Margin
Open-Loop Output Impedance
AC Distortion
Total Harmonic Distortion plus Noise
Step Response
Rise Time, 10% to 90%
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Sym.
GBWP
PM
R
OUT
THD + N
Min.
—
—
—
—
Typ.
24
65
20
0.0015
Max.
—
—
—
—
Units
MHz
°
%
G = +1
Conditions
G = +1, V
OUT
= 2V
P-P
, f = 1 kHz,
V
DD
= 5.5V, BW = 80 kHz
G = +1, V
OUT
= 100 mV
P-P
G = +1
f = 0.1 Hz to 10 Hz
t
r
SR
E
ni
e
ni
i
ni
—
—
—
—
20
10
16
10
4
—
—
—
—
—
ns
V/µs
µV
P-P
nV/Hz f = 1 MHz
fA/Hz f = 1 kHz
DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
V
DD
/2, V
L
= V
DD
/2, R
L
= 2 k to V
L
, C
L
= 50 pF and CS = V
SS
(refer to
Figures 1-1
and
1-2).
Parameters
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current
CS Internal Pull-Down Resistor
Amplifier Output Leakage
CS Dynamic Specifications
CS Input Hysteresis
CS High to Amplifier Off Time
(output goes High Z)
CS Low to Amplifier On Time
Sym.
Min.
Typ.
Max.
Units
Conditions
V
IL
I
CSL
V
IH
I
CSH
I
SS
R
PD
I
O(LEAK)
V
HYST
t
OFF
t
ON
V
SS
—
—
0.1
0.2V
DD
—
V
nA
CS = 0V
0.8V
DD
—
-2
—
—
—
—
—
0.7
-1
5
50
V
DD
—
—
—
—
—
—
10
V
µA
µA
M
nA
CS = V
DD
, T
A
= +125°C
CS = V
DD
0.25
200
2
V
ns
µs
G = +1 V/V, V
L
= V
SS
,
CS = 0.8V
DD
to V
OUT
= 0.1(V
DD
/2)
G = +1 V/V, V
L
= V
SS
,
CS = 0.2V
DD
to V
OUT
= 0.9(V
DD
/2)
DS20002197C-page 4
2009-2014 Microchip Technology Inc.
MCP631/2/3/4/5/9
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, all limits are specified for: V
DD
= +2.5V to +5.5V, V
SS
= GND.
Parameters
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Sym.
T
A
T
A
T
A
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
Min.
-40
-40
-65
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
201.0
190.5
52.5
56.7
149.5
54.0
202
90.8
100
52.1
Max.
+125
+125
+150
—
—
—
—
—
—
—
—
—
—
Units
°C
°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Note 2
Note 2
Note 2
Note 1
Conditions
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 6L-SOT-23
Thermal Resistance, 8L-2x3 TDFN
Thermal Resistance, 8L-3x3 DFN
Thermal Resistance, 8L-SOIC
Thermal Resistance, 10L-3x3 DFN
Thermal Resistance, 10L-MSOP
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Thermal Resistance, 16L-4x4-QFN
Note 1:
2:
Operation must not cause T
J
to exceed Maximum Junction Temperature specification (+150°C).
Measured on a standard JC51-7, four-layer printed circuit board with ground plane and vias.
1.3
Timing Diagram
I
CS
CS
t
ON
V
OUT
High Z
On
-2.5 mA
(typical)
0.7 µA
(typical)
V
IL
0.1 nA
(typical)
V
IH
t
OFF
High Z
-1 µA
(typical)
0.7 µA
(typical)
EQUATION 1-1:
R
F
G
DM
= ------
-
R
G
G
N
= 1 + G
DM
1
1
V
CM
= V
P
1
–
------
+ V
REF
------
-
-
G
N
G
N
V
OST
= V
IN-
–
V
IN+
V
OUT
=
V
REF
+
V
P
–
V
M
G
DM
+
V
OST
G
N
Where:
G
DM
= Differential Mode Gain
G
N
= Noise Gain
V
CM
= Op Amp’s Common-Mode
Input Voltage
V
OST
= Op Amp’s Total Input Offset
Voltage
(V/V)
(V/V)
(V)
(mV)
-1 µA
I
SS
(typical)
FIGURE 1-1:
Timing Diagram.
1.4
Test Circuits
The circuit used for most DC and AC tests is shown in
Figure 1-2.
It independently sets V
CM
and V
OUT
; see
Equation 1-1.
The circuit’s Common-Mode voltage is
(V
P
+ V
M
)/2, not V
CM
. V
OST
includes V
OS
plus the
effects of temperature, CMRR, PSRR and A
OL
.
2009-2014 Microchip Technology Inc.
DS20002197C-page 5
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