IRHLNMC7S3214 datasheet, PDF - EEWORLD Datasheet

IRHLNMC7S3214: DescriptionPower Field-Effect Transistor,; CategoryDiscrete semiconductor The transistor; File Size1021KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IRHLNMC7S3214 Overview

Power Field-Effect Transistor,

Parameter Name	Attribute value
Objectid	7340492210
package instruction	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	17.6 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (Abs) (ID)	3.2 A
Maximum drain current (ID)	3.2 A
Maximum drain-source on-resistance	1.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	23.2 W
Maximum pulsed drain current (IDM)	12.8 A
Guideline	RH - 300K Rad(Si)
surface mount	YES
Terminal form	NO LEAD
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	67 ns
Maximum opening time (tons)	52 ns

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