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ZUMT591TA

Description
transistors bipolar - bjt pnp medium power
Categorysemiconductor    Discrete semiconductor   
File Size45KB,2 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Environmental Compliance  
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transistors bipolar - bjt pnp medium power

ZUMT591TA Parametric

Parameter NameAttribute value
ManufactureDiodes Incorporated
Product CategoryTransistors Bipolar - BJT
RoHSYes
ConfiguratiSingle
Transistor PolarityPNP
Collector- Base Voltage VCBO80 V
Collector- Emitter Voltage VCEO Max60 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Curre1 A
Gain Bandwidth Product fT150 MHz
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-323
DC Collector/Base Gain hfe Mi100 at 1 mA at 5 V, 100 at 500 mA at 5 V, 80 at 1 A at 5 V, 15 at 2 A at 5 V
DC Current Gain hFE Max100 at 1 mA at 5 V
Maximum Power Dissipati500 mW
Minimum Operating Temperature- 55 C
PackagingReel
Factory Pack Quantity3000

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