transistors bipolar - bjt pnp medium power
Parameter Name | Attribute value |
Manufacture | Diodes Incorporated |
Product Category | Transistors Bipolar - BJT |
RoHS | Yes |
Configurati | Single |
Transistor Polarity | PNP |
Collector- Base Voltage VCBO | 80 V |
Collector- Emitter Voltage VCEO Max | 60 V |
Emitter- Base Voltage VEBO | 5 V |
Maximum DC Collector Curre | 1 A |
Gain Bandwidth Product fT | 150 MHz |
Maximum Operating Temperature | + 150 C |
Mounting Style | SMD/SMT |
Package / Case | SOT-323 |
DC Collector/Base Gain hfe Mi | 100 at 1 mA at 5 V, 100 at 500 mA at 5 V, 80 at 1 A at 5 V, 15 at 2 A at 5 V |
DC Current Gain hFE Max | 100 at 1 mA at 5 V |
Maximum Power Dissipati | 500 mW |
Minimum Operating Temperature | - 55 C |
Packaging | Reel |
Factory Pack Quantity | 3000 |