LAB
MECHANICAL DATA
Dimensions in mm (inches)
LCC2 – Ceramic Surface Mount Package
SEME
HCT700
COMPLEMENTARY
SWITCHING TRANSISTORS IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT
PACKAGE FOR HIGH RELIABILITY
APPLICATIONS
FEATURES
2.29 ± 0.20
(0.09 ± 0.008)
1.65 ± 0.13
(0.065 ± 0.005)
0.64 ± 0.08
(0.025 ± 0.003)
1.40 ± 0.15
(0.055 ± 0.006)
• SILICON PLANAR EPITAXIAL NPN /PNP
TRANSISTORS
4.32 ± 0.13
(0.170 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
2
1
3
4
5
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• HIGH SPEED SATURATED SWITCHING
A
6
0.23
rad.
(0.009)
1.27 ± 0.13
(0.05 ± 0.005)
6.22 ± 0.13
(0.245 ± 0.005)
A=
Pi n 1
CO L L ECT OR
Pi n 4
CO L L ECT OR
DESCRIPTION
Hermetically sealed surface mount complementary
transistor pair.
The HCT700 transistor die have similar electrical
characteristics to the 2N2222A on the NPN side and
the 2N2907A on the PNP side.
The HCT700 is ideal for high reliability and space
applications requiring small size and low weight
devices.
Pi n 6
EM I T T ER
Pin 2
B AS E
Pin 3
B AS E
Pin 5
E MI T T ER
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
T
L
T
L
Semelab plc.
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Power Dissipation @ T
amb
= 25°C
Power Dissipation @ T
substrate
= 25°C
Derate above 25°C
NPN to PNP Isolation Voltage
Operating and Storage Temperature Range
Soldering temperature
(Vapour phase reflow for 30 sec)
Soldering temperature
(Heated collet for 5 sec)
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
NPN
75
50
6.0
800mA
PNP
60
60
5.0
600mA
0.4W
2.0W
11.4mW / °C
500V
–65 to +200°C
215°C
260°C
Prelim. 4/94
LAB
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C unless otherwise stated)
Parameter
Off Characteristics
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Collector – Base Breakdown Voltage
Collector – Emitter Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base
Cut-off Current
I
C
= 10
m
A
I
C
= 10mA
I
E
= 10
m
A
I
E
= 0
I
CBO
T
amb
= 25°C
I
E
= 0
I
C
= 0
T
amb
= 25°C
V
CE
= 50V
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
h
FE
DC Current Gain
V
CE
= 10V
V
CE
= 10V
V
CE
= 10V
T
amb
= –55°C
V
CE(SAT
V
BE(SAT)
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
I
C
= 150mA
I
C
= 500mA
I
C
= 150mA
I
C
= 500mA
V
CE
= 10V
f = 1kHz
V
CE
= 20V
f = 100MHz
V
EB
= 2V
I
C
= 20mA
I
C
= 50mA
8.0
25
30
f = 100kHz to 1MHz
I
C
= 0.1mA
I
C
= 1mA
I
C
= 10mA
I
C
= 150mA
1
I
C
= 500mA
1
I
C
= 10mA
I
C
= 1mA
I
B
= 15mA
1
I
B
= 50mA
1
I
B
= 15mA
1
I
B
= 50mA
1
I
C
= 1mA
0.60
0.30
1.00
1.20
2.00
50
75
100
100
30
35
50
0.40
1.60
1.30
2.60
V
V
300
325
I
E
= 0
I
B
= 0
I
C
= 0
V
CB
= 60V
V
CB
= 50V
V
CB
= 60V
V
EB
= 4V
V
EB
= 3.5V
1.0
75
100
100
100
50
300
—
450
10
10
10
50
75
50
6.0
10
10
60
60
5.0
V
V
V
nA
SEME
HCT700
Test Conditions
NPN
PNP
Min. Max. Min. Max. Unit
T
amb
= 150°C V
CB
= 50V
I
EBO
I
CES
Emitter– Base Cut-off Current
Collector – Emitter Cut-off Current
m
A
nA
m
A
On Characteristics
Small Signal Characteristics
h
fe
h
fe
C
obo
C
ibo
Small Signal Current Gain
Small Signal Current Gain
Output Capacitance
Input Capacitance
50
2.5
2.0
8.0
100
—
—
pF
pF
V
CE
= 10V f = 100kHz to 1MHz
V
EB
= 0.5V f = 100kHz to 1MHz
V
CC
= 30V
I
B1
= 15mA
V
CC
= 30V
I
C
= 150mA
I
B1
= I
B2
= 15mA
I
C
= 150mA
Small Signal Characteristics
t
on
t
off
Turn On Time
Turn Off Time
35
300
45
300
ns
ns
1 Pulse Test: Pulse Width
£
300ms,
d £
2%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 4/94
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