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SSM3J111TU(TE85L)

Description
mosfet vds=-20v Id=-1A 3pin
CategoryDiscrete semiconductor    The transistor   
File Size252KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

SSM3J111TU(TE85L) Overview

mosfet vds=-20v Id=-1A 3pin

SSM3J111TU(TE85L) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Reach Compliance Codeunknow
SSM3J111TU
TOSHIBA Field Effect Transistor
Silicon P-Channel MOS Type
SSM3J111TU
High Speed Switching Applications
2.5V drive
Low on-resistance:
R
on
= 480mΩ (max) (@V
GS
=
−4
V)
0.65±0.05
2.1±0.1
1.7±0.1
+0.1
0.3 -0.05
3
0.166±0.05
Unit: mm
R
on
= 680mΩ (max) (@V
GS
=
−2.5
V)
2.0±0.1
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D (Note 1)
P
D (Note 2)
T
ch
T
stg
Rating
−20
±
12
−1
−2
800
500
150
−55~150
Unit
V
V
A
mW
°C
°C
1
2
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on ceramic board.
(25.4 mm
×
25.4 mm
×
0.8 mm, Cu Pad: 645 mm
2
)
Note 2: Mounted on FR4 board.
(25.4 mm
×
25.4 mm
×
1.6 mm, Cu Pad: 645 mm
2
)
Note:
UFM
JEDEC
JEITA
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Symbol
V
(BR) DSS
I
DSS
I
GSS
V
th
⏐Y
fs
R
DS (ON)
C
iss
C
oss
C
rss
t
on
t
off
V
DSF
Test Conditions
I
D
= −1
mA, V
GS
=
0
V
DS
= −20
V, V
GS
=
0
V
GS
= ±12V,
V
DS
=
0
V
DS
= −3
V, I
D
= −0.1
mA
V
DS
= −3
V, I
D
=−
0.3 A
I
D
= −0.3
A, V
GS
= −4.0
V
I
D
= −0.3
A, V
GS
= −2.5
V
(Note3)
(Note3)
(Note3)
Min
−20
−0.6
0.6
Typ.
1.2
380
530
160
90
25
27
43
0.85
Max
−1
±1
−1.1
480
680
1.2
Unit
V
μA
μA
V
S
pF
pF
pF
ns
V
V
DS
= −10
V, V
GS
=
0, f
=
1 MHz
V
DS
= −10
V, V
GS
=
0, f
=
1 MHz
V
DS
= −10
V, V
GS
=
0, f
=
1 MHz
V
DD
= −10
V, I
D
= −0.3
A,
V
GS
=
0~−2.5 V, R
G
=
4.7
Ω
I
D
=
1A, V
GS
=
0 V
(Note3)
Drain-Source forward voltage
Note3: Pulse test
0.7±0.05
1: Gate
2: Source
3: Drain
1
2007-11-01

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