2N7002PW
60 V, 310 mA N-channel Trench MOSFET
Rev. 02 — 29 July 2010
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323
(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
AEC-Q101 qualified
Logic-level compatible
Trench MOSFET technology
Very fast switching
1.3 Applications
High-speed line driver
Low-side loadswitch
Relay driver
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source
voltage
gate-source
voltage
drain current
drain-source
on-state
resistance
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; I
D
= 500 mA;
T
j
= 25 °C; t
p
≤
300 µs; pulsed;
δ ≤
0.01
[1]
Conditions
T
amb
= 25 °C
Min
-
-20
-
-
Typ
-
-
-
1
Max Unit
60
20
310
1.6
V
V
mA
Ω
Static characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
NXP Semiconductors
2N7002PW
60 V, 310 mA N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
S
D
gate
source
drain
1
2
3
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT323 (SC-70)
3. Ordering information
Table 3.
Ordering information
Package
Name
2N7002PW
SC-70
Description
plastic surface-mounted package; 3 leads
Version
SOT323
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
X8%
Type number
2N7002PW
[1]
% = -: made in Hong Kong; % = p: made in Hong Kong; % = t: made in Malaysia; % = W: made in China
5. Limiting values
Table 5.
Symbol
V
DS
V
GS
I
D
I
DM
P
tot
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
[1]
[2]
[1]
[1]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
amb
= 25 °C
Min
-
-20
-
-
-
-
-
-
-
-55
-65
T
amb
= 25 °C
[1]
Max
60
20
310
240
1.2
260
310
830
150
150
150
310
Unit
V
V
mA
mA
A
mW
mW
mW
°C
°C
°C
mA
junction temperature
ambient temperature
storage temperature
source current
Source-drain diode
-
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
2N7002PW
Product data sheet
Rev. 02 — 29 July 2010
2 of 15
NXP Semiconductors
2N7002PW
60 V, 310 mA N-channel Trench MOSFET
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
120
P
der
(%)
80
017aaa001
120
I
der
(%)
80
017aaa002
40
40
0
−75
−25
25
75
125
175
T
amb
(°C)
0
−75
−25
25
75
125
175
T
amb
(°C)
Fig 1.
Normalized total power dissipation as a
function of ambient temperature
10
Fig 2.
Normalized continuous drain current as a
function of ambient temperature
017aaa027
I
D
(A)
1
(1)
(2)
10
−1
(3)
(4)
(5)
(6)
10
−2
10
−3
10
−1
1
10
V
DS
(V)
10
2
I
DM
= single pulse
(1) t
p
= 100
μs
(2) t
p
= 1 ms
(3) t
p
= 10 ms
(4) t
p
= 100 ms
(5) DC; T
sp
= 25 °C
(6) DC; T
amb
= 25 °C; drain mounting pad 1 cm
2
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
2N7002PW
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
3 of 15
NXP Semiconductors
2N7002PW
60 V, 310 mA N-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
415
350
-
Max
480
400
150
Unit
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
10
3
duty cycle = 1
Z
th(j-a)
(K/W)
10
2
0.75
0.5
0.33
0.25
0.1
0.2
0.05
017aaa028
10
0
0.02
0.01
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 4.
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.5
0.25
0.1
0.33
0.2
0.05
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa029
0
10
0.02
0.01
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 1 cm
2
Fig 5.
2N7002PW
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
4 of 15
NXP Semiconductors
2N7002PW
60 V, 310 mA N-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
Conditions
I
D
= 10 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
DS
= V
GS
; T
j
= 25 °C
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 60 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 5 V; I
D
= 50 mA; pulsed;
t
p
≤
300 µs;
δ ≤
0.01 ; T
j
= 25 °C
V
GS
= 10 V; I
D
= 500 mA; pulsed;
t
p
≤
300 µs;
δ ≤
0.01 ; T
j
= 25 °C
g
fs
forward
transconductance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
I
S
= 115 mA; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 50 V; R
L
= 250
Ω;
V
GS
= 10 V;
R
G(ext)
= 6
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 10 V; f = 1 MHz;
T
j
= 25 °C
V
DS
= 10 V; I
D
= 200 mA; pulsed;
t
p
≤
300 µs;
δ ≤
0.01 ; T
j
= 25 °C
I
D
= 300 mA; V
DS
= 30 V; V
GS
= 4.5 V;
T
j
= 25 °C
Min
60
1.1
-
-
-
-
-
-
-
Typ
-
1.75
-
-
-
-
1.3
1
400
Max
-
2.4
1
10
100
100
2
1.6
-
Unit
V
V
µA
µA
nA
nA
Ω
Ω
mS
Static characteristics
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
-
-
-
-
-
-
-
-
-
-
0.47
0.6
0.2
0.2
30
7
4
3
4
10
5
0.75
0.8
-
-
50
-
-
6
-
20
-
1.1
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
Source-drain diode
2N7002PW
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
5 of 15
Analog electronics
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