3N163/3N164
P-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part
Number
3N163
3N164
V
(BR)DSS
Min
(V)
–40
–30
V
GS(th)
(V)
–2 to –5
–2 to –5
r
DS(on)
Max
(W)
250
300
I
D(on)
Min
(mA)
–5
–3
C
rss
Max
(pF)
0.7
0.7
t
ON
Typ
(ns)
18
18
Features
Benefits
Applications
D
Ultra-High Input Impedance Amplifier
D
Ultra-Low Input Leakage: 0.02 pA Typ.
D
High Input Impedance Isolation
D
High Gate Breakdown Voltage:
"125
V
D
Minimize Handling ESD Problems
D
Smoke Detectors
D
High Off Isolation without Power
D
Electrometers
D
Normally Off
D
Analog Switching
D
Digital Switching
Description
The 3N163/164 are lateral p-channel MOSFETs designed
for analog switch and preamplifier applications where
high speed and low parasitic capacitances are required.
The hermetic TO-206AF package is compatible with
military processing per military standards (see Military
information).
TO-206AF
(TO-72)
D
1
4
S
2
G
Top View
3
Case
Substrate
Absolute Maximum Ratings (T
A
= 25_C Unless Otherwise Noted)
Drain Source Voltage
(3N163) . . . . . . . . . . . . . . . . . . . . .
–40
V
(3N164) . . . . . . . . . . . . . . . . . . . . . -30 V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
"30
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA
Lead Temperature (
1
/
16
” from case for 10 seconds) . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . –55 to 150_C
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375 mW
Notes:
a. Derate 3 mW/_C above 25_C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70228.
Siliconix
P-37404—Rev. D, 04-Jul-94
1
3N163/3N164
Specifications
a
Limits
3N163
3N164
Parameter
Static
Drain-Source Breakdown Voltage
Source-Drain Breakdown Voltage
Gate-Threshold Voltage
Gate-Source Voltage
Symbol
Test Conditions
Typ
b
Min Max Min Max Unit
V
(BR)DSS
V
(BR)SDS
V
GS(th)
V
GS
I
D
= –10
mA,
V
DS
= 0 V
I
S
= –10
mA,
V
GD
= V
BD
= 0 V
I
D
= –10
mA,
V
GS
= V
DS
I
D
= –0.5 mA, V
DS
= –15 V
V
GS
= –40 V, V
DS
= 0 V
–70
–70
–2.5
–3.5
<–1
–1
<–1
–1
–8
–20
–10
–25
–10
180
270
–40
–40
–2
–3
–5
–6.5
–10
–30
–30
V
–2
–2.5
–5
–6.5
Gate-Body
Gate Body Leakage
I
GSS
T
A
= 125_C
d
V
GS
= –30 V, V
DS
= 0 V
T
A
= 125_C
d
–10
pA
Zero-Gate
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –15 V, V
GS
= 0 V
T
A
= 125_C
d
V
GD
= V
BD
= 0 V, V
SD
= –20 V
T
A
= 125_C
d
V
DS
= –15 V, V
GS
= –10 V
V
GS
= –20 V, I
D
= –100
mA
T
A
= 125_C
d
–200
–400
nA
–400
–800
pA
nA
Zero-Gate
Zero Gate Voltage Source Current
On-State Drain Current
c
Drain Source On-Resistance
Drain-Source On Resistance
I
SDS
I
D(on)
r
DS( )
DS(on)
–5
–30
250
–3
–30
300
mA
W
Dynamic
Forward Transconductance
c
Common-Source Output Conductance
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
g
fs
g
os
C
iss
C
oss
C
rss
V
DS
= –15 V, I
D
= –10 mA
15 V
10 A
f = 1 MHz
V
DS
= –15 V, I
D
= –10 mA
S
f = 1 kHz
2.7
150
2.4
2.5
0.5
2
4
250
3.5
3
0.7
1
4
250
3.5
3
0.7
pF
mS
mS
Switching
e
Turn-On
Turn On Time
Turn-Off Time
t
d(on)
t
r
t
d(off)
V
DD
= –15 V, R
L
= 1500
W
15
I
D
^
–10 mA, V
GEN
= –12 V
R
G
= 50
W
5
13
25
12
24
50
12
24
50
ns
Notes:
a. T
A
= 25_C unless otherwise noted.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Pulse test: PW
v300
ms
duty cycle
v3%.
d. This parameter not registered with JEDEC.
e. Switching time is essentially independent of operating temperature.
MRA
2
Siliconix
P-37404—Rev. D, 04-Jul-94
3N163/3N164
Typical Characteristics
–50
Output Characteristics
V
BS
= 0 V
V
GS
= –20 V
–18 V
–16 V
I
D
– Drain Current (mA)
–50
Transfer Characteristics
V
DS
= V
GS
V
BS
= 0 V
–40
I
D
– Drain Current (mA)
–40
–30
–14 V
–12 V
–10 V
–30
–20
–20
–10
–8 V
–6 V
–10
0
0
–10
–20
–30
–40
–50
V
DS
– Drain-Source Voltage (V)
0
0
–4
–8
–12
–16
–20
V
GS
– Gate-Source Voltage (V)
Low-Level Output Characteristics
–1000
g
fs
– Forward Transconductance (
m
A)
–800
–600
I
D
– Drain Current (
m
A)
–400
–200
0
200
400
600
800
1000
0.4
0.2
0
–0.2
–0.4
V
DS
– Drain-Source Voltage (V)
V
BS
= 0 V
V
GS
= –10 V
–9 V
–8 V
–7 V
–6 V
10 k
Common-Source Forward Transconductance
vs. Drain Current
V
DS
= –15 V
V
BS
= 0 V
f= 1 kHz
T
A
= 25_C
–5 V
–4 V
1k
125_C
100
10
–0.01
–0.1
–1
–10
I
D
– Drain Current (mA)
100 k
r
DS(on)
– Drain-Source On-Resistance (
W
)
Drain-Source On-Resistance
vs. Gate-Source Voltage
I
D
= 100
mA
V
BS
= 0 V
2.5
Low-Level Drain-Source On-Voltage
vs. Gate-Source Voltage
V
DS
– Drain-Source Voltage (V)
2.0
I
D
= 0.1 mA
10 mA
1.0
10 k
1.5
1k
T
A
= 125_C
T
A
= 25_C
100
0
–10
V
GS
– Gate-Source Voltage (V)
–20
0.5
1 mA
0
0
–10
V
GS
– Gate-Source Voltage (V)
–20
Siliconix
P-37404—Rev. D, 04-Jul-94
3
3N163/3N164
Typical Characteristics (Cont’d)
Capacitance vs. Gate-Source Voltage
3.0
C
iss
2.4
I
S(off)
, I
D(off)
– Leakage
10 nA
I
S(off)
1 nA
I
D(off)
C
oss
C (pF)
1.8
V
DS
= –15 V
V
BS
= 0 V
f= 1 MHz
100 nA
Drain-Source Leakage Current
vs. Temperature
1.2
C
rss
100 pA
0.6
0
0
–4
–8
–12
–16
–20
V
GS
– Gate-Source Voltage (V)
10 pA
10
30
50
70
90
110
130
150
T
A
– Temperature (_C)
Common-Source Output Conductance
vs. Drain Voltage
10 k
V
BS
= 0 V
f= 1 kHz
g
os
– Output Conductance (
m
S)
1000
Common-Source Output Conductance
vs. Drain Current
V
DS
= –15 V
V
BS
= 0 V
f= 1 kHz
100
g
os
– Output Conductance (
m
S)
1k
I
D(on)
= –10 mA
100
–1 mA
10
0
–5
–10
–15
–20
–25
–30
V
DS
– Drain-Source Voltage (V)
10
1
–0.1
–1.0
–10
–100
I
D
– Drain Current (mA)
Switching Time Test Circuit
To Scope
–V
DD
0V
510
W
R
L
V
IN
V
OUT
To Scope
Input pulse: t
d
, t
r
< 1 ns
Pulse width: 100 ns
Rep rate: 1 MHz
Sampling Scope
t
r
< 360 ps
R
IN
= 1 MW
C
IN
= 2 pF
BW = 500 MHz
–12 V
t
d(on)
0V
10%
V
OUT
–V
DD
t
r
t
f
90%
t
d(off)
50%
V
IN
51
W
4
Siliconix
P-37404—Rev. D, 04-Jul-94
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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