DISCRETE SEMICONDUCTORS
DATA SHEET
M3D096
BLF245B
VHF push-pull power MOS
transistor
Product specification
Supersedes data of 1998 Jan 08
2000 Oct 17
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
FEATURES
•
High power gain
•
Easy power control
•
Good thermal stability
•
Gold metallization ensures
excellent reliability.
DESCRIPTION
Dual push-pull silicon N-channel
enhancement mode vertical D-MOS
transistor designed for large signal
amplifier applications in the VHF
frequency range.
The transistor is encapsulated in a
4-lead, SOT279 balanced flange
envelope, with a ceramic cap. The
mounting flange provides the
common source connection for the
transistors.
PINNING - SOT279
PIN
1
2
3
4
5
DESCRIPTION
drain 1
gate 1
gate 2
drain 2
source
Top view
fpage
BLF245B
PIN CONFIGURATION
1
4
g2
d2
s
d1
MSB018
MBB157
5
2
3
g1
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a push-pull common source test circuit.
MODE OF OPERATION
CW, class-B
f
(MHz)
175
V
DS
(V)
28
P
L
(W)
30
G
p
(dB)
>
14
η
D
(%)
>
55
2000 Oct 17
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Per transistor section unless otherwise specified.
SYMBOL
V
DS
±V
GS
I
D
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
storage temperature
junction temperature
CONDITIONS
−
−
−
up to T
mb
= 25
°C;
total device;
−
both sections equally loaded
−65
−
MIN.
BLF245B
MAX.
65
20
4.5
75
+150
200
UNIT
V
V
A
W
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
PARAMETER
thermal resistance from
junction to mounting base
thermal resistance from
mounting base to heatsink
CONDITIONS
total device; both sections equally loaded
total device; both sections equally loaded
VALUE
2.3
0.3
UNIT
K/W
K/W
handbook, halfpage
10
2
ID
(A)
MRA922
MRA929
120
handbook, halfpage
Ptot
(W)
(2)
10
80
(1)
(1)
(2)
1
40
10
−1
1
10
VDS (V)
10
2
0
0
40
80
120
Th (
o
C)
160
(1) Current in this area may be limited by R
DS(on)
.
(2) T
mb
= 25
°C.
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
2000 Oct 17
3
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
CHARACTERISTICS (per section)
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
g
fs
R
DS(on)
I
DSX
C
is
C
os
C
rs
PARAMETER
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
CONDITIONS
I
D
= 5 mA; V
GS
= 0
V
GS
= 0; V
DS
= 28 V
±V
GS
= 20 V; V
DS
= 0
I
D
= 5 mA; V
DS
= 10 V
I
D
= 0.75 A; V
DS
= 10 V
I
D
= 0.75 A; V
GS
= 10 V
V
GS
= 10 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
MIN.
65
−
−
2
600
−
−
−
−
−
BLF245B
TYP. MAX.
−
−
−
−
850
0.8
5
60
40
4.5
−
1
1
4.5
−
1.5
−
−
−
−
UNIT
V
mA
µA
V
mS
Ω
A
pF
pF
pF
MGP180
handbook, halfpage
2
handbook, halfpage
6
MGP181
T.C.
(mV/K)
0
ID
(A)
4
Tj = 25
°C
125
°C
−2
−4
2
−6
−8
1
10
0
10
2
ID (mA)
10
3
0
4
8
12
VGS (V)
16
V
DS
= 10 V.
V
DS
= 10 V.
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
Fig.5
Drain current as a function of gate-source
voltage; typical values per section.
2000 Oct 17
4
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF245B
handbook, halfpage
2
MGP182
handbook, halfpage
160
MGP183
RDS(on)
(Ω)
C
(pF)
120
1
80
Cis
Cos
40
0
0
40
80
120
Tj (°C)
160
0
0
10
20
30
VDS (V)
40
I
D
= 0.75 A; V
GS
= 10 V.
V
GS
= 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
Fig.7
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
handbook, halfpage
20
MGP184
Crs
(pF)
10
0
0
10
20
30
VDS (V)
40
V
GS
= 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage; typical values per
section.
2000 Oct 17
5
Power technology
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