SG23N06T, SG23N06DT
Discrete IGBTs
Dimensions TO-247AD
Dim.
A
B
Millimeter
Min. Max.
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32
5.4
1.65
-
1.0
10.8
4.7
0.4
1.5
5.49
6.2
2.13
4.5
1.4
11.0
5.3
0.8
2.49
Inches
Min.
Max.
0.780
0.819
0.610
0.140
0.170
0.212
0.065
-
0.040
0.426
0.185
0.016
0.087
0.800
0.845
0.640
0.144
0.216
0.244
0.084
0.177
0.055
0.433
0.209
0.031
0.102
C(TAB)
E
C
G
G=Gate, C=Collector,
E=Emitter,TAB=Collector
C
D
E
F
G
H
J
K
L
M
N
SG23N06T
SG23N06DT
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
Test Conditions
T
J
=25
o
C to 150
o
C
T
J
=25
o
C to 150
o
C; R
GE
=1 M ;
Continuous
Transient
T
C
=25
o
C
T
C
=90
o
C
T
C
=25
o
C, 1 ms
Maximum Ratings
600
600
±20
±30
48
23
96
I
CM
=48
@ 0.8 V
CES
150
-55...+150
150
-55...+150
Unit
V
V
A
A
W
o
V
GE
=15V; T
VJ
=125
o
C; R
G
=22
(RBSOA)
Clamped inductive load; L=100uH
P
C
T
C
=25
o
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
M
d
Weight
Mounting torque
C
300
o
C
1.13/10
6
Nm/Ib.in.
g
(T
J
=25
o
C,
unless otherwise specified)
Symbol
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
Test Conditions
I
C
=250uA; V
GE
=0V
I
C
=250uA; V
CE
=V
GE
V
CE
=0.8V
CES
;
V
GE
=0V;
T
J
=25
o
C
T
J
=150
o
C
2.1
Characteristic Values
min.
600
2.5
5.0
200
1
±100
2.5
typ.
max.
V
V
uA
mA
nA
V
Unit
V
CE
=0V; V
GE
=±20V
I
C
=I
C90
; V
GE
=15V
SG23N06T, SG23N06DT
Discrete IGBTs
(T
J
=25
o
C,
unless otherwise specified)
Symbol
Test Conditions
Characteristic Values
min.
g
ts
I
C
=I
C90
; V
CE
=10V
Pulse test, t
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
0.25
Inductive load, T
J
=25
o
C
I
C
=I
C90
; V
GE
=15V; L=100uH
V
CE
=0.8V
CES
; R
G
=R
off
=10
Remarks:Switching times may increase
for V
CE
(Clamp) 0.8V
CES'
higher T
J
or
increased R
G
Inductive load, T
J
=125
o
C
I
C
=I
C90
; V
GE
=15V; L=100uH
V
CE
=0.8V
CES
; R
G
=R
off
=10
Remarks:Switching times may increase
for V
CE
(Clamp)
increased R
G
0.8V
CES'
higher T
J
or
I
C
=I
C90
; V
GE
=15V; V
CE
=0.5V
CES
V
CE
=25V; V
GE
=0V; f=1MHz
300us, duty cycle
2%
1500
120
40
55
13
17
15
25
75
60
0.24
15
25
0.15
130
110
0.6
0.83
140
110
0.36
ns
ns
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
K/W
K/W
nC
pF
9
typ.
17
max.
S
Unit
Reverse Diode (FRED)
Symbol
Test Conditions
I
F
=I
C90
; V
GE
=0V;T
J
=150
o
C
Pulse test, t
I
RM
t
rr
R
thJC
300us, duty cycle
2%; T
J
=25
o
C
(T
J
=25
o
C,
unless otherwise specified)
Characteristic Values
min.
typ.
max.
1.6
2.5
6
100
25
0.9
V
A
ns
ns
K/W
Unit
V
F
I
F
=I
C90
; V
GE
=0V; -di
F
/dt=100A/us
V
R
=100V; T
J
=100
o
C
I
F
=1A; -di/dt=100A/us; V
R
=30V; T
J
=25
o
C
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