PHOTOMULTlPLlER TUBES
R636–10, R758–10
UV to Near IR (R636–10:185 to 930 nm, R758–10:160 to 930nm) Spectral Response
28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
MateriaI
Photocathode
Minimum Effective Area
Window Material
Structure
Dynode
Number of Stages
Anode to Last Dynode
Direct Interelectrode
Capacitances
Anode to All Other Electrodes
Base
SuitabIe Socket
R636–10
185 to 930
R758–10
160 to 930
300 to 800
GaAs (Cs)
3 12
UV glass
Fused silica glass
Circular–cage
9
4
6
JEDEC No.B11–88
E678–11A(option)
Unit
nm
nm
mm
pF
pF
MAXIMUM RATINGS (Absolute Maximum Values)
Supply Voltage
Average Anode Current
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
Value
1500
250
0.001
Unit
Vdc
Vdc
mA
CHARACTERISTlCS (at 25
)
Min.
400
Typ.
550
62
63
48
0.53
4.5 10
5
250
2.8 10
4
2.8 10
4
2.2 10
4
0.1
2
20
Max.
Unit
A/lm
mA/W
Parameter
Luminous(2856K)
Cathode Sensitivity
at 350nm
at 632.8nm
Radiant
at 852.1nm
Red/White Ratio (with R–68 filter)
Luminous(2856K)
Anode Sensitivity
Radiant
at 350nm
at 632.8nm
at 852.1nm
Gain
100
A/lm
A/W
2
nA
ns
ns
Anode Dark Current at 10A/lm
Anode Pulse Rise Time
Time Response
Electron Transit Time
After 30min. storage in darkness
NOTE:
Anode characteristics are measured with the voItage distribution ratio shown below.
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
K
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Dy9
Electrodes
Ratio
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage : 1250Vdc,
K : Cathode, Dy : Dynode,
P : Anode
P
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
lnformation furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or ommissions. Specifications are
subject to change without notice. No patent right are granted to any of the circuits described herein.
©
1994 Hamamatsu Photonics K.K.
PHOTOMULTlPLlER TUBES R636–10, R758–10
Figure 1:
Typical Spectral Response
Figure 2: Typical Anode Sensitivity and
Typical Gain
TPMSB0070EB
100
TPMSB0069EA
10
3
10
7
Y
(T
)
P.
R758-10
R636-10
CATHODE RADIANT SENSITIVITY(mA/W)
QUANTUM EFFICIENCY(%)
R636-10
R758-10
CATHODE
RADIANT
SENSITIVITY
ANODE LUMINOUS SENSITIVITY(A/lm)
10
2
US
NO
I
SE
N
SI
V
TI
IT
Y
10
6
10
QUANTUM
EFFICIENCY
1
10
1
O
AN
DE
LU
M
GA
IN
YP
(T
.)
10
5
10
0
10
4
10-
1
10
3
0.1
10-
2
10
2
0.01
200
400
600
800
1000
WAVELENGTH(nm)
10-
3
500
700
1000
10
1
1500
SUPPLY VOLTAGE(V)
Figure 3:
Dimensional Outline and Basing Diagram (Unit : mm)
29.0 1.7
8MIN.
3MIN.
49
Socket
(E678 – 11A)
PHOTOCATHODE
DY5
DY6
6
DY7
38
5
7
16MIN.
12MIN.
3.5
DY4 4
8 DY8
9 DY9
10
1
11
K
P
5
80MAX.
DY3 3
94MAX.
2.5
DY2
2
DY1
DIRECTION
OF LIGHT
49.0
BOTTOM VIEW
(BASING DIAGRAM)
TPMSA0027EC
29
4
34MAX.
11 PIN BASE
JEDEC No. B11-88
HA COATING
HAMAMATSU PHOTONICS K.K., Electoron Tube Center
314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.:
Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218
Germany:
Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658
France:
Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10
United Kingdom:
Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384
North Europe:
Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95
Italy:
Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741
18
TACCA0008EA
33
TPMS1016E03
JUN. 1994
GAIN
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