CYStech Electronics Corp.
Dual N-Channel Enhancement Mode Power MOSFET
Spec. No. : C705H8
Issued Date : 2016.05.05
Revised Date :
Page No. : 1/ 14
MTNN6904ADH8
Features
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
Pb-free lead plating and Halogen-free package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
I
D
@V
GS
=10V, T
C
=100°C
I
D
@V
GS
=10V, T
A
=25°C
I
D
@V
GS
=10V, T
A
=70°C
R
DS(ON)
@V
GS
=10V, I
D
=12A(typ)
R
DS(ON)
@V
GS
=4.5V, I
D
=10A(typ)
Tr 1
40V
35A
22A
11A
8.8A
10.7mΩ
14.0mΩ
Tr 2
40V
53A
33.5A
14.5A
11.6A
6.2mΩ
8.4mΩ
Equivalent Circuit
MTNN6904ADH8
Outline
DFN5×6
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
MTNN6904ADH8-0-T6-G
Package
DFN 5
×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTNN6904ADH8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C, V
GS
=10V
Continuous Drain Current @T
C
=100°C, V
GS
=10V
Continuous Drain Current @T
A
=25°C, V
GS
=10V
Continuous Drain Current @T
A
=70°C, V
GS
=10V
Pulsed Drain Current
Avalanche Current @L=0.1mH
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
T
C
=25°C
T
C
=100°C
Power Dissipation
T
A
=25°C
T
A
=70°C
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Spec. No. : C705H8
Issued Date : 2016.05.05
Revised Date :
Page No. : 2/ 14
Symbol
V
DS
V
GS
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 4)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Limits
Tr 1
Tr 2
40
40
±20
±20
35
53
22
33.5
11
14.5
8.8
11.6
140
212
18
40
32
72
3.1
4.2
31
42
12.4
16.8
3.1
3.1
2
2
-55~+150
Unit
V
I
D
I
DSM
I
DM
I
AS
E
AS
E
AR
P
D
P
DSM
Tj, Tstg
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max
(Note 5)
(Note 6)
Symbol
R
θJC
R
θJA
Value
Tr 1
4
40
70
Tr 2
3
40
70
Unit
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2.The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with T
A
=25
°C,
t≤10s. The value in any given application depends on the user’s specific board design. The power dissipation P
DSM
is based on
R
θJA
and the maximum allowed junction temperature of 150°C.
3
.
Ratings are based on low frequency and low duty cycles to keep initial T
J
=25
°
C.
4.
Tr 1 : L=1mH, I
AS
=8A, V
GS
=10V, V
DD
=15V. Tr 2 : L=1mH, I
AS
=12A, V
GS
=10V, V
DD
=15V.
5.
When mounted on
1 in² copper pad of FR-4 board , t≤10s.
6. When mounted on
1 in² copper pad of FR-4 board , steady state.
MTNN6904ADH8
CYStek Product Specification
CYStech Electronics Corp.
Tr 1 Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
*R
DS(ON)
Min.
40
-
1.0
-
-
-
-
-
-
Typ.
-
0.03
-
10.5
-
-
-
10.7
14.0
7.2
2.3
2.8
7.8
16.2
36.6
8
682
119
59
3.5
-
-
0.73
9.1
3.9
Max.
-
-
2.5
-
±
100
1
25
14
20
10.8
-
-
11.7
24.3
54.9
12
1023
150
89
-
35
140
1.1
-
-
Unit
V
V/°C
V
S
nA
μA
m
Ω
Test Conditions
Spec. No. : C705H8
Issued Date : 2016.05.05
Revised Date :
Page No. : 3/ 14
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=10V, I
D
=10A
V
GS
=
±
20V
V
DS
=32V, V
GS
=0V
V
DS
=32V, V
GS
=0V, Tj=85°C
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=10A
V
DS
=20V, I
D
=6A, V
GS
=4.5V
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Rg
-
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
*trr
-
*Qrr
-
nC
ns
V
DS
=20V, I
D
=1A, V
GS
=10V, R
G
=3.3
Ω
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=15V, f=1MHz
f=1MHz
I
S
=1A, V
GS
=0V
V
GS
=0V, I
F
=10A, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTNN6904ADH8
CYStek Product Specification
CYStech Electronics Corp.
Tr 2 Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
∆BV
DSS
/∆Tj
V
GS(th)
*G
FS
I
GSS
I
DSS
*R
DS(ON)
Min.
40
-
1.0
-
-
-
-
-
-
Typ.
-
0.03
-
15.5
-
-
-
6.2
8.4
17.4
4.5
7.9
13.4
19.8
53.4
12.4
1448
202
144
2.9
-
-
0.71
12.6
6.5
Max.
-
-
2.5
-
±
100
1
25
8
11
26.1
-
-
20.1
29.7
80.1
18.6
2172
303
216
-
53
212
1.1
-
-
Unit
V
V/°C
V
S
nA
μA
m
Ω
Test Conditions
Spec. No. : C705H8
Issued Date : 2016.05.05
Revised Date :
Page No. : 4/ 14
V
GS
=0V, I
D
=250μA
Reference to 25°C, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=10V, I
D
=10A
V
GS
=
±
20V
V
DS
=32V, V
GS
=0V
V
DS
=32V, V
GS
=0V, Tj=85°C
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=10A
V
DS
=20V, I
D
=8A, V
GS
=4.5V
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Rg
-
Source-Drain Diode
*I
S
-
*I
SM
-
*V
SD
-
*trr
-
*Qrr
-
nC
ns
V
DS
=20V, I
D
=1A, V
GS
=10V, R
G
=3.3
Ω
pF
Ω
A
V
ns
nC
V
GS
=0V, V
DS
=15V, f=1MHz
f=1MHz
I
S
=1A, V
GS
=0V
V
GS
=0V, I
F
=12A, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTNN6904ADH8
CYStek Product Specification
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