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S1M

Description
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size138KB,2 Pages
ManufacturerJGD(Jinan Gude Electronic Device)
Websitehttp://www.jgd.com.cn/
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S1M Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC

S1M Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMA, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin/silver
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current1 A

S1M Related Products

S1M S1K S1J S1G S1D S1B S1A
Description 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA
Number of components 1 - 1 1 - 1 1
state DISCONTINUED - ACTIVE DISCONTINUED ACTIVE - -
surface mount Yes - Yes Yes - YES YES
Diode type Signal diode - Signal diode Signal diode SIGNAL DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum repetitive peak reverse voltage 1000 V - 600 V 400 V - 100 V 50 V
Maximum reverse recovery time - - 1.5 us 1.8 us - 1.8 µs 1.8 µs

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