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ES3K

Description
3 A, 800 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size38KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
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ES3K Overview

3 A, 800 V, SILICON, RECTIFIER DIODE

ES3A THRU ES3K
R
SURFACE MOUNT GLASS PASSIVATED JUNCTION
SUPER FAST RECOVERY RECTIFIER
Reverse Voltage: 50 to 800 Volts
Forward Current:3.0Amperes
S E M I C O N D U C T O R
FEATURES
Glass passivated
Ideal for surface mount automotive applications
Ultrafast recovery time for high efficiency
Built-in strain relief
Easy pick and place
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Lead (Pb)-free component
Component in accordance to RoHS 2011
/
65
/
EU
High temperature soldering guaranteed:260
°
C/10 seconds at terminals
0.086(2.2)
0.075(1.91)
SMB(DO-214AA)
0.155(3.94)
0.130(3.30)
0.187(4.76)
0.160(4.06)
0.012(0.305)
0.006(0.152)
MECHANICAL DATA
Case: JEDEC SMB(DO-214AA) molded plastic body
Terminals: solder plated ,solderable per MIL-STD-750,method 2026
Polarity: color band denotes cathode end
Mounting Position: Any
Weight: 0.003ounce,0.093 gram
0.096(2.44)
0.083(2.13)
0.060(1.52)
0.030(0.76)
0.008(0.203)
MAX
0.220(5.59)
0.200(5.
08
)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25
°
C ambient temperature unless otherwise specified ,Single phase ,half wave ,60H
Z
,resistive or inductive
load. For capacitive load,derate current by 20%.)
ES3
Symbols
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
At T
L
=110
°
C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage
at 3.0 A
Maximum DC Reverse
Current At Rated DC
Blocking Voltage
T
A
=25°C
I
R
T
A
=125°C
Trr
C
J
R
θ
JA
T
J
,
T
STG
500
35
45
70
-55 to+150
ns
P
F
℃/W
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
0.95
10
A
A
50
35
50
B
100
70
100
D
200
140
200
F
300
210
300
3.0
G
400
280
400
J
600
420
600
K
800
560
800
Units
Volts
Volts
Volts
Amps
Amps
2
.
2
100
V
F
1.25
1.7
Volts
Maximum Reverse Recovery Time(Note1)
Typical Junction Capacitance(Note2)
Typical Thermal Resistance
(
NOTE3
)
Operating Junction and Storage Temperature
Note:
1.Reverse Recovery Test conditions: I
F=
0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1MH
Z
and applied reverse voltage of 4.0 Volts.
3
.
Thermal Resistance From Junction To Ambient P
.
C
.
B
.
Mounted On 0
.
2x0
.
2
"(
5
.
0x5
.
0mm
)
Copper Pad Areas
.
JINAN JINGHENG ELECTRONICS CO., LTD.
2-1
HTTP
://
WWW.JINGHENGGROUP.COM

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Description 3 A, 800 V, SILICON, RECTIFIER DIODE RECTIFIER DIODE

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