CT851 Series
DC Input 4-Pin Phototransistor Optocoupler
Features
•
•
•
•
•
•
•
High isolation 5000 VRMS
CTR flexibility available see order information
DC input with transistor output
External Creepage
≥
7.5mm (S/SL Type)
External Creepage
≥
8.0mm (SLM Type)
Operating temperature range - 55 ° to 100 °C
C
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Description
The CT851 series consists of a high power transistor
optically coupled to a gallium arsenide
Infrared-emitting diode in a 4-lead DIP package
different lead forming options.
Applications
•
•
•
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Package Outline
Schematic
Note: Different lead forming options available. See package
dimension.
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Jun, 2015
CT851 Series
DC Input 4-Pin Phototransistor Optocoupler
Absolute Maximum Rating at 25
o
C
Symbol
V
ISO
P
TOT
T
OPR
T
STG
T
SOL
Isolation voltage
Total power dissipation
Operating temperature
Storage temperature
Soldering temperature
Parameters
Ratings
5000
260
-55 ~ +100
-55 ~ +150
260
Units
V
RMS
mW
o
C
o
C
o
C
Notes
Emitter
I
F
I
F(TRANS)
V
R
P
D
Forward current
Peak transient current
Reverse voltage
Emitter power dissipation
(≤1µs P.W,300pps)
80
1
6
150
mA
A
V
mW
Detector
P
D
B
VCEO
B
VECO
I
C
Detector power dissipation
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Current
300
350
7
100
mW
V
V
mA
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Jun, 2015
CT851 Series
DC Input 4-Pin Phototransistor Optocoupler
Electrical Characteristics
T
Emitter Characteristics
Symbol
V
F
I
R
C
IN
Parameters
Forward voltage
Reverse Current
Input Capacitance
A
= 25° (unless otherwise specified)
C
Test Conditions
I
F
=10mA
V
R
= 6V
f= 1MHz
Min
-
-
-
Typ
1.2
-
30
Max
1.4
5
-
Units
V
µA
pF
Notes
Detector Characteristics
Symbol
B
VCEO
B
VECO
I
CEO
Parameters
Collector-Emitter Breakdown
Emitter-Collector Breakdown
Collector-Emitter Dark Current
Test Conditions
I
C
= 0.1mA
I
E
= 0.1mA
V
CE
= 200V, I
F
=0mA
Min
350
7
-
Typ
-
-
-
Max
-
-
100
Units
V
V
nA
Notes
Transfer Characteristics
Symbol
CTR
V
CE(SAT)
R
IO
C
IO
Parameters
Current Transfer Ratio
Collector-Emitter Saturation
I
F
= 20mA, I
C
= 1mA
Voltage
Isolation Resistance
Isolation Capacitance
V
IO
= 500V
DC
f= 1MHz
5x10
10
-
-
0.5
-
1
pF
-
-
0.4
V
Test Conditions
I
F
= 5mA, V
CE
= 5V
Min
50
Typ
-
Max
600
Units
%
Notes
Switching Characteristics
Symbol
t
r
t
f
Rise Time
I
C
= 2mA, V
CE
= 2V, R
L
= 100
Fall Time
-
8
-
Parameters
Test Conditions
Min
-
Typ
6
Max
-
Units
µs
Notes
CT Micro
Proprietary & Confidential
Page 3
Rev 1
Jun, 2015
CT851 Series
DC Input 4-Pin Phototransistor Optocoupler
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 4
Rev 1
Jun, 2015
CT851 Series
DC Input 4-Pin Phototransistor Optocoupler
CT Micro
Proprietary & Confidential
Page 5
Rev 1
Jun, 2015
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