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MTBH0N25J3

Description
N-Channel Enhancement Mode Power MOSFET
File Size377KB,9 Pages
ManufacturerCYSTEKEC
Websitehttp://www.cystekec.com/
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MTBH0N25J3 Overview

N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C895J3
Issued Date : 2015.12.10
Revised Date :
Page No. : 1/9
MTBH0N25J3
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating and halogen-free package
BV
DSS
I
D
@V
GS
=10V, T
C
=25°C
I
D
@V
GS
=10V, T
A
=25°C
R
DSON(TYP)
V
GS
=10V, I
D
=3A
V
GS
=4.5V, I
D
=2A
250V
3.5A
1.0A
780mΩ
735mΩ
Equivalent Circuit
MTBH0N25J3
Outline
TO-252(DPAK)
G:Gate
S:Source
D:Drain
G
D S
Ordering Information
Device
MTBH0N25J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBH0N25J3
CYStek Product Specification

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