S9004P2CT
30A SCHOTTKY BARRIER RECTIFIER
Features
·
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material - UL Flammability
Classification 94V-0
TO-220AB
Dim
L
B
C
K
D
A
M
Min
14.22
9.65
2.54
5.84
¾
12.70
2.29
0.51
3.53Æ
3.56
1.14
0.30
2.03
Max
15.88
10.67
3.43
6.86
6.25
14.73
2.79
1.14
4.09Æ
4.83
1.40
0.64
2.92
A
B
C
D
E
G
H
J
G
Mechanical Data
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·
·
·
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 2.24 grams (approx)
Mounting Position: Any
Marking: Type Number
J
E
N
K
L
M
H H
P
N
P
All Dimensions in mm
@ T
A
= 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Minimum Avalanche Breakdown Voltage
per element (Note 1)
@ 1.5A
Average Rectified Output Current
(Note 1 & 3)
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method) (Note 3)
Instantaneous Forward Voltage Drop
Peak Reverse Current
at Rated DC Blocking Voltage
@ i
F
= 15A
@ T
C
= 25°C
@ T
C
= 125°C
Symbol
V
RRM
V
RWM
V
R
¾
I
O
I
FSM
v
FM
I
RM
C
j
dv/dt
W
R
qJc
T
j,
T
STG
S9004P2CT
60
70
30
250
0.56
2.0
150
470
10000
10
1.5
-60 +150
Unit
V
V
A
A
V
mA
pF
V/ms
mJ
K/W
°C
Typical Junction Capacitance per element (Note 2)
Voltage Rate of Change at Rated DC Blocking Voltage
Non-repetitive Avalanche Energy
(Constant Current During a 20ms pulse)
@ T
C
= 125°C
Typical Thermal Resistance Junction to Case per element
(Note 1)
Operating and Storage Temperature Range
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. I
FSM
and I
O
values shown are for entire package. For any single diode the values are one half of listed value.
DS23027 Rev. P-5
1 of 2
S9004P2CT
40
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
50
100
I
(AV)
, AVERAGE FORWARD CURRENT (A)
30
10
20
1.0
10
0
0
50
100
150
T
C
, CASE TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
1000
0.1
0.2
0.4
0.6
T
j
= 25
°
C
Pulse width = 300
µ
s
2% duty cycle
0.8
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
I
F
, INSTANTANEOUS REVERSE CURRENT (A)
1000
T
j
= 25
°
C
100
C
J
, CAPACITANCE (pF)
T
j
= 25
°
C
Pulse width = 300
µ
s
2% duty cycle
100
10
1.0
10
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
0
20
40
60
V
F
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
DS23027 Rev. P-5
2 of 2
S9004P2CT
RF/Wirelessly
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