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S1310AHBJ-32.0000(T)

Description
VCXO, Clock, 32MHz Min, 125MHz Max, 32MHz Nom,
CategoryPassive components    oscillator   
File Size3MB,3 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

S1310AHBJ-32.0000(T) Overview

VCXO, Clock, 32MHz Min, 125MHz Max, 32MHz Nom,

S1310AHBJ-32.0000(T) Parametric

Parameter NameAttribute value
Objectid4000541972
package instructionGWDIP4/14,.5
Reach Compliance Codecompliant
ECCN codeEAR99
Installation featuresSURFACE MOUNT
Number of terminals4
Maximum operating frequency125 MHz
Minimum operating frequency32 MHz
Nominal operating frequency32 MHz
Maximum operating temperature70 °C
Minimum operating temperature
Package body materialMETAL
Encapsulate equivalent codeGWDIP4/14,.5
power supply3.3 V
Certification statusNot Qualified
Maximum slew rate35 mA
Nominal supply voltage3.3 V
surface mountYES
technologyHYBRID
SaRonix
Voltage Controlled Crystal Oscillator
Technical Data
Frequency Range:
Frequency Stability:
3.3 & 5V, LVCMOS/LVTTL
Sx1310 / Sx1319 / Sx1510 / Sx1519 Series
32 MHz to 125 MHz
±25 or ±50 ppm over all conditions: operating temperature,
voltage change, load change, calibration tolerance, with V
C
= 2.5V @ 5V, VC = 1.65V @ 3.3V
@ 40°C: ±10 ppm max for 5 years or ±12 ppm max for 10 years
Aging:
Temperature Range:
Operating:
Storage:
Supply Voltage:
Recommended Operating:
ACTUAL SIZE
0 to +70°C or -40 to +85°C
-55 to +125°C
5 V ±5% or 3.3V ±10%
Description
A voltage controlled crystal oscillator
with a wide range of performance op-
tions to 125 MHz. The devices are pack-
aged in either standard 14-pin or 8-pin
DIP compatible all metal, resistance
welded packages for commercial or in-
dustrial temperature range applications.
True SMD DIL14 versions for IR reflow
are available, select option "S" in part
number builder. See separate data sheet
for SMD package dimensions.
Applications & Features
Phase-locked loops encountered in
Telecom, LAN and Wireless data, and
in video processing applications
LVCMOS, LVTTL compatible
˜
Tri-state option available
Output Waveform
CMOS
T
r
1 Level
80%V
DD
50%V
DD
20%V
DD
0 Level
GND
SYMMETRY
T
f
V
DD
Supply Current:
32 to 70 MHz:
70+ to 125 MHz:
Output Drive:
Symmetry:
50mA max, 35mA max @ 3.3V
65mA max, 35mA max @ 3.3V
Rise & Fall Times:
Logic 0:
Logic 1:
Load:
Jitter:
Pull Characteristics:
Input Impedance:
Frequency Response (-3dB):
Pullability:
Control Voltage:
Transfer Function:
Linearity:
Center Control Voltage:
Phase noise:
3.3V: 45/55% max @ 50% V
DD
for 0 to 70°C,
3.3V: 40/60% max @ 50% V
DD
for -40 to +85°C
5.0V: 45/55% max @ 50% V
DD or
40/60% max @ 1.4V TTL level
4ns max: 20% to 80% V
DD
1.5ns max: 0.5V to 2.5V @ 5V TTL only
0.5V max @ 5V or 20% V
DD
max @ 3.3V
2.5V min @ 5V or 80% V
DD
min @ 3.3V
5V: 5TTL or 50pF, 32 to 50 MHz
5V: 5TTL or 30pF 50+ to 125 MHz
3.3V: 30pF up to 80 MHz, 95Ω AC up to 125 MHz
20ps max RMS period jitter
50KΩ min
50 kHz min
±25, ±50, ±75, ±100 ppm APR*
0.5 to 4.5 V @ 5V or 0.3 to 3.0V @ 3.3V
Frequency increases when Control Voltage increases
5% or 10% max
2.5V @ 5V, 1.65V @ 3.3V
-95 dbc typ / Hz @ 100Hz
-110 dbc typ / Hz @ 1kHz
-100 dbc typ / Hz @ 10kHz
Mechanical:
Shock:
Solderability:
Terminal Strength:
Vibration:
Solvent Resistance:
Resistance to Soldering Heat:
MIL-STD-883, Method 2002, Condition B
MIL-STD-883, Method 2003
MIL-STD-202, Method 211, Conditions B2
MIL-STD-883, Method 2007, Condition A
MIL-STD-202, Method 215
MIL-STD-202, Method 210, Condition A, B or C
( I or J for Gull Wing )
Environmental:
Gross Leak Test:
Fine Leak Test:
Thermal Shock:
Moisture Resistance:
MIL-STD-883,
MIL-STD-883,
MIL-STD-883,
MIL-STD-883,
Method
Method
Method
Method
1014, Condition C
1014, Condition A2
1011, Condition A
1004
*
APR = (VCXO Pull relative to specified Output Frequency)
(VCXO Frequency Stability)
NOTE: APR is inclusive of Aging
DS-162
REV E
SaRonix
www.pericom.com/saronix

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