DMG2302UQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
R
DS(ON)
max
90mΩ @ V
GS
= 4.5V
20V
120mΩ @ V
GS
= 2.5V
2.7A
I
D
max
T
A
= +25°C
4.2A
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
General Purpose Interfacing Switch
Power Management Functions
Boost Application
Analog Switch
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
D
D
G
S
Top View
Internal Schematic
G
S
Top View
Ordering Information
(Note 5)
Part Number
DMG2302UQ-7
DMG2302UQ-13
Notes:
Case
SOT-23
SOT-23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
G23 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
G23
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
2010
X
Feb
2
2011
Y
Mar
3
YM
2012
Z
Apr
4
2013
A
May
5
Jun
6
2014
B
Jul
7
2015
C
Aug
8
2016
D
Sep
9
2017
E
Oct
O
2018
F
Nov
N
2019
G
Dec
D
July 2015
DMG2302UQ
Document number: DS38036 Rev. 1 - 2
1 of 6
www.diodes.com
© Diodes Incorporated
DMG2302UQ
Maximum Ratings
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6)
Pulsed Drain Current (Note 7)
Steady
State
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
20
±8
4.2
3.4
27
Units
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @T
A
= +25°C
Operating and Storage Temperature Range
Notes:
6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Repetitive rating, pulse width limited by junction temperature.
Symbol
T
A
= +25°C
T
A
= +70°C
P
D
R
θJA
T
J,
T
STG
Value
0.8
0.5
156
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
20
–
–
0.4
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ
–
–
–
–
–
13
0.75
594.3
64.5
57.7
1.5
7.0
0.9
1.4
7.4
9.8
28.1
6.7
Max
–
1.0
±100
1.0
90
120
–
1.0
–
–
–
–
–
–
–
–
–
–
–
Unit
V
µA
nA
V
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 10μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 50μA
V
GS
= 4.5V, I
D
= 3.6A
V
GS
= 2.5V, I
D
= 3.1A
V
DS
= 5V, I
D
= 3.6A
V
GS
= 0V, I
S
= 1A
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 3.6A
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 2.78Ω, R
G
= 1.0Ω
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMG2302UQ
Document number: DS38036 Rev. 1 - 2
2 of 6
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July 2015
© Diodes Incorporated
DMG2302UQ
10
10
V
GS
= 8.0V
V
GS
= 4.5V
V
GS
= 3.0V
8
I
D
, DRAIN CURRENT (A)
V
GS
= 2.5V
V
GS
= 2.0V
V
GS
= 1.5V
8
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
6
6
4
4
T
A
= 150°C
2
V
GS
= 1.2V
2
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
3
0
0
0.5
1
1.5
V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.06
0.055
0.05
0.045
0.04
V
GS
= 1.8V
0.06
0.055
0.05
0.045
T
A
= 150°C
V
GS
= 4.5V
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0
T
A
= 125°C
T
A
= 85°C
0.035
0.03
0.025
0.02
0.1
1
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
10
V
GS
= 2.5V
T
A
= 25°C
T
A
= -55°C
V
GS
= 4.5V
4
6
8
10
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
2
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.8
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.06
0.05
V
GS
= 2.5V
I
D
= 5A
1.6
1.4
V
GS
= 2.5V
I
D
= 5A
V
GS
= 4.5V
I
D
= 10A
0.04
1.2
0.03
V
GS
= 4.5V
I
D
= 10A
1.0
0.02
0.8
0.01
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMG2302UQ
Document number: DS38036 Rev. 1 - 2
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July 2015
© Diodes Incorporated
DMG2302UQ
1.4
10
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.2
8
1.0
0.8
0.6
0.4
0.2
0
-50
I
S
, SOURCE CURRENT (A)
6
T
A
= 25°C
I
D
= 1mA
I
D
= 250µA
4
2
0
0
0.2
0.4
0.6
0.8
1.0
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
I
DSS
, DRAIN-SOURCE LEAKAGE CURRENT (nA)
1,000
10,000
T
A
= 150°C
C
iss
1,000
T
A
= 125°C
C, CAPACITANCE (pF)
100
100
C
oss
C
rss
10
T
A
= 85°C
1
T
A
= 25°C
T
A
= -55°C
f = 1MHz
10
0
4
8
12
16
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
1
0.1
0
4
6
8 10 12 14 16 18 20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
2
20
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
D = 0.02
0.01
R
JA
(t) = r(t) * R
JA
R
JA
= 157°C/W
P(pk)
D = 0.005
D = 0.01
t
1
D = Single Pulse
t
2
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
10
100
1,000
DMG2302UQ
Document number: DS38036 Rev. 1 - 2
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July 2015
© Diodes Incorporated
DMG2302UQ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
H
J
All 7°
GAUGE PLANE
0.25
K1
K
a
A
M
L
L1
C
B
D
F
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
DMG2302UQ
Document number: DS38036 Rev. 1 - 2
5 of 6
www.diodes.com
July 2015
© Diodes Incorporated
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