MSFC90
Thyristor/Diode Modules
V
RRM
/ V
DRM
I
FAV
/ I
TAV
Applications
800 to 1600V
90Amp
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
1
2
3
5
4
Features
MSFC
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide
DBCceramic isolated metal baseplate
UL E243882 approved
Module Type
TYPE
MSFC90-08
MSFC90-12
MSFC90-16
V
RRM/
V
DRM
800V
1200V
1600V
V
RSM
900V
1300V
1700V
◆Diode
Maximum Ratings
Symbol
I
D
I
FSM
it
Visol
Tvj
Tstg
Mt
Ms
Weight
2
Item
Tc=85℃
Conditions
t=10mS Tvj =45℃
a.c.50HZ;r.m.s.;1min
Values
90
2000
20000
3000
-40 to +125
-40 to +125
Units
A
A
As
V
℃
℃
Nm
Nm
g
2
Output Current(D.C.)
Surge forward current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
Module（
Approximately）
To terminals(M5)
To heatsink(M6)
3±15%
5±15%
100
Thermal Characteristics
Symbol
Item
R
th(j-c)
Thermal Impedance, max.
Rth(c-s)
Thermal Impedance, max.
Conditions
Junction to Case
Case to Heatsink
Values
0.14
0.10
Units
℃/W
℃/W
Electrical Characteristics
Symbol
V
FM
Item
Forward Voltage Drop, max.
Repetitive Peak Reverse Current,
max.
Conditions
T=25℃ I
F
=300A
T
vj
=25℃ V
RD
=V
RRM
T
vj
=125℃ V
RD
=V
RRM
1
Values
Min.
Typ.
≤0.5
≤6
Max.
1.65
Units
V
mA
mA
I
RRM
Document Number: MSFC90
Sep.06,2013
www.smsemi.com
MSFC90
◆Thyristor
Maximum Ratings
Symbol
I
TAV
I
TSM
it
Visol
Tvj
Tstg
Mt
Ms
di/dt
dv/dt
a
Critical Rate of Rise of On-State
Current
Critical Rate of Rise of Off-State
Voltage, min.
Maximum allowable acceleration
2
Item
o
Conditions
Sine 180 ;Tc=85℃
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
a.c.50HZ;r.m.s.;1min
Values
90
2000
1750
20000
15000
3000
-40 to +130
-40 to +125
Units
A
A
A2s
V
℃
℃
Nm
Nm
A/us
V/us
m/s
2
Average On-State Current
Surge On-State Current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
To terminals(M5)
To heatsink(M6)
T
VJ
= T
VJM
, 2/3V
DRM
,I
G
=500mA
Tr<0.5us,tp>6us
T
J
=T
VJM
,2/3V
DRM
linear voltage rise
3±15%
5±15%
150
1000
50
Thermal Characteristics
Symbol
Item
Thermal Impedance, max.
R
th(j-c)
Rth(c-s)
Thermal Impedance, max.
Conditions
Junction to Case
Case to Heatsink
Values
0.28
0.20
Units
℃/W
℃/W
Electrical Characteristics
Symbol
V
TM
I
RRM
/I
DRM
Item
Peak On-State Voltage, max.
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
On state threshold voltage
Value of on-state
slope resistance. max
Gate Trigger Voltage, max.
Gate Trigger Current, max.
Non-triggering gate voltage, max.
Non-triggering gate current, max.
Latching current, max.
Holding current, max.
Gate controlled delay time
Circuit commutated turn-off time
Conditions
T=25℃ I
T
=300A
T
VJ
=T
VJM
,V
R
=V
RRM
,V
D
=
V
DRM
For power-loss
calculations only
(T
VJ
=125℃)
T
VJ
=T
VJM
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃ , V
D
=6V
T
VJ
=125℃,V
D
=2/3V
DRM
T
VJ
=125℃, V
D
=2/3V
DRM
T
VJ
=25℃ , R
G
= 33 Ω
T
VJ
=25℃ , V
D
=6V
TVJ=25℃,
IG=1A, diG/dt=1A/us
T
VJ
=T
VJM
Values
Min. Typ. Max.
1.72
20
Units
V
mA
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
tgd
tq
0.9
2
3
150
0.25
6
300
150
1
100
600
250
V
mΩ
V
mA
V
mA
mA
mA
us
us
Document Number: MSFC90
Sep.06,2013
www.smsemi.com
2
MSFC90
Performance Curves
140
125
W
100
rec.30
rec.60
rec.120
sin.180
200
A
160
DC
DC
120
sin.180
75
80
rec.120
rec.60
50
25
P
TAV
0
0
I
TAV
20
40
60
80
100
A 120
40
I
TAVM
0
0
rec.30
Fig1. Power dissipation
0.50
℃/
W
Z
th(j-
S
)
2000
A
Fig2.Forward Current Derating Curve
50HZ
Tc
150
℃
50
100
℃
130
0.25
Z
th(j-
C
)
1000
0
0.001
t 0.01
0.1
1
10
S 100
0
10
100
ms 1000
Fig3. Transient thermal impedance
300
A
Typ
.
Fig4. Max Non-Repetitive Forward Surge
Current
200
max
.
100
I
T
0
0
V
TM
0.5
1.0
25℃
- - -125℃
1.5
V 2.0
Fig5. Forward Characteristics
Document Number: MSFC90
Sep.06,2013
www.smsemi.com
3
51mcu
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