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MUR410G

Description
4 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size175KB,2 Pages
ManufacturerNanjing International Group Co.,Ltd
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MUR410G Overview

4 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD

4 A, 100 V, 硅, 整流二极管, DO-201AD

MUR410G Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionLEAD FREE, PLASTIC, CASE 267-03, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeROUND
Package SizeLONG FORM
Terminal formWIRE
terminal coatingMATTE TIN
Terminal locationAXIAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
applicationULTRA FAST RECOVERY POWER
Phase1
Maximum reverse recovery time0.0350 us
Maximum repetitive peak reverse voltage100 V
Maximum average forward current4 A
Maximum non-repetitive peak forward current125 A
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