F2114L-3PC datasheet, PDF - EEWORLD Datasheet

F2114L-3PC: DescriptionStandard SRAM, 1KX4, 300ns, MOS, PDIP18,; Categorystorage storage; File Size214KB，4 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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F2114L-3PC Overview

Standard SRAM, 1KX4, 300ns, MOS, PDIP18,

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1167349081
package instruction	DIP, DIP18,.3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	300 ns
I/O type	COMMON
JESD-30 code	R-PDIP-T18
JESD-609 code	e0
memory density	4096 bit
Memory IC Type	STANDARD SRAM
memory width	4
Humidity sensitivity level	2A
Number of terminals	18
word count	1024 words
character code	1000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1KX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP18,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	250
power supply	5 V
Certification status	Not Qualified
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	MOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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