SBM1040CT
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
POWERMITEÒ3
Features
UNDER DEVELOPMENT
POWERMITEâ3
Dim
Min
4.03
6.40
Max
4.09
6.61
NEW PRODUCT
·
·
·
·
·
·
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
Very Low Forward Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, OR’ing, and Polarity Protection
Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
1
A
P
3
E
G
A
B
C
.889 NOM
1.83 NOM
1.10
5.01
4.37
.71
.36
1.73
1.14
5.17
4.43
.77
.46
1.83
.178 NOM
B
2
J
H
D
E
G
Mechanical Data
·
·
·
·
·
·
Case: POWERMITEâ3 Molded Plastic
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: See Sheet 2
Weight: 0.072 grams (approx.)
M
D
C
PIN 1
PIN 2
H
J
K
C
L
PIN 3, BOTTOMSIDE
HEAT SINK
K
L
M
P
.178 NOM
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (See also Figure 5)
per element
total device
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
R
qJS
T
j
T
STG
Value
40
28
5
10
50
2.5
-55 to +125
-55 to +150
Unit
V
V
A
A
°C/W
°C
°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
Per Package (JEDEC Method), total device
T
C
= 115°C
Typical Thermal Resistance Junction to Soldering Point Per Element
Operating Temperature Range
Storage Temperature Range
DS30356 Rev. 2 - 1
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SBM1040CT
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
Per Element
V
F
Min
40
¾
¾
¾
¾
¾
¾
¾
Typ
¾
0.45
0.39
0.53
0.50
35
4
10
2
375
Max
¾
0.48
0.42
0.575
0.55
150
10
80
5
¾
Unit
V
V
mA
mA
mA
mA
pF
Test Condition
I
R
= 500mA
I
F
= 5A, T
j
= 25°C
I
F
= 5A, T
j
= 100°C
I
F
= 10A, T
j
= 25°C
I
F
= 10A, T
j
= 100°C
V
R
= 35V, T
j
= 25°C
V
R
= 35V, T
j
= 100°C
V
R
= 17.5V, T
j
= 25°C
V
R
= 17.5V, T
j
= 100°C
f = 1.0MHz, V
R
= 4.0V DC
NEW PRODUCT
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
Peak Reverse Current (Note 1)
Total Capacitance
Notes:
Per Element
Per Element
I
R
C
T
1. Short duration test pulse used to minimize self-heating effect.
Ordering Information
(Note 2)
Device
SBM1040CT-13
Notes:
Packaging
POWERMITEâ3
Shipping
5000/Tape & Reel
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
SBM1040CT
YYWW
SBM1040CT = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
100
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (mA)
100
10
T
j
= +125°C
10
T
j
= +125°C
1
T
j
= +100°C
1
T
j
= +100°C
0.1
T
j
= -25°C
0.1
0.01
0.001
T
j
= +25°C
0.01
T
j
= +25°C
0.0001
0
100
200
300
400
500
600
0.001
0
5
10
15
20
25
30
35
40
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics, Per Element
V
F
, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 1 Typical Forward Characteristics, Per Element
UNDER DEVELOPMENT
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SBM1040CT
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
50
Single Half-Sine-Wave
(JEDEC Method)
10,000
f = 1MHz
NEW PRODUCT
40
T
C
= 115°C
Total Device
30
C
T
, TOTAL CAPACITANCE (pF)
1000
20
10
0
1
10
100
100
0
5
10
15
20
25
30
35
40
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Capacitance
vs. Reverse Voltage, Per Element
P
F(AV)
, AVERAGE FORWARD POWER DISSIPATION (W)
7.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
5
8
7
9 10
3
4
6
2
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Fig. 6 Forward Power Dissipation
1
Note 3
T
j
= 125°C
Note 2
I
F
, DC FORWARD CURRENT (A)
6.0
Note 1
4.5
Note 2
3.0
dc
1.5
Note 3
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 DC Forward Current Derating
Notes:
1. T
A
= T
SOLDERING POINT
, R
qJS
= 2.5°C/W, R
qSA
= 0°C/W.
2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. R
qJA
in range of 20-40°C/W.
3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R
qJA
in range of
85-115°C/W.
UNDER DEVELOPMENT
POWERMITE
is a registered trademark of Microsemi Corporation.
DS30356 Rev. 2 - 1
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SBM1040CT
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