30V N-Channel MOSFET 8-VSONP -55 to 150
| Parameter Name | Attribute value |
| Brand Name | Texas Instruments |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Texas Instruments |
| package instruction | SON-8 |
| Contacts | 8 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 6 weeks |
| Samacsys Confidence | 4 |
| Samacsys Status | Released |
| Samacsys PartID | 306919 |
| Samacsys Pin Count | 9 |
| Samacsys Part Category | MOSFET (N-Channel) |
| Samacsys Package Category | Other |
| Samacsys Footprint Name | Q3A |
| Samacsys Released Date | 2020-01-20 15:54:01 |
| Is Samacsys | N |
| Other features | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 45 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V |
| Maximum drain current (Abs) (ID) | 60 A |
| Maximum drain current (ID) | 15 A |
| Maximum drain-source on-resistance | 0.0081 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 36 pF |
| JESD-30 code | R-PDSO-F5 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 5 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 2.6 W |
| Maximum pulsed drain current (IDM) | 84 A |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | FLAT |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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