K4X51163PE-FEC6T datasheet, PDF

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K4X51163PE-FEC6T: DescriptionDDR DRAM, 32MX16, 5.5ns, CMOS, PBGA60,; Categorystorage storage; File Size534KB，20 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4X51163PE-FEC6T Overview

DDR DRAM, 32MX16, 5.5ns, CMOS, PBGA60,

K4X51163PE-FEC6T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	108428005
package instruction	FBGA, BGA60,9X10,32
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	5.5 ns
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
interleaved burst length	2,4,8,16
JESD-30 code	R-PBGA-B60
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	16
Number of terminals	60
word count	33554432 words
character code	32000000
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	32MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA60,9X10,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	2,4,8,16
Maximum standby current	0.000015 A
Maximum slew rate	0.14 mA
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM

K4X51163PE-FEC6T Related Products

	K4X51163PE-FEC6T	K4X51163PE-FEC3T	K4X51163PE-FGC6000	K4X51163PE-FGC6T
Description	DDR DRAM, 32MX16, 5.5ns, CMOS, PBGA60,	DDR DRAM, 32MX16, 6ns, CMOS, PBGA60,	DDR DRAM, 32MX16, 5.5ns, CMOS, PBGA60,	DDR DRAM, 32MX16, 5.5ns, CMOS, PBGA60,
Is it Rohs certified?	conform to	conform to	conform to	conform to
Objectid	108428005	108428007	108428008	108428009
package instruction	FBGA, BGA60,9X10,32	FBGA, BGA60,9X10,32	FBGA, BGA60,9X10,32	FBGA, BGA60,9X10,32
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum access time	5.5 ns	6 ns	5.5 ns	5.5 ns
Maximum clock frequency (fCLK)	166 MHz	133 MHz	166 MHz	166 MHz
I/O type	COMMON	COMMON	COMMON	COMMON
interleaved burst length	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16
JESD-30 code	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60
memory density	536870912 bit	536870912 bit	536870912 bit	536870912 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	16	16	16	16
Number of terminals	60	60	60	60
word count	33554432 words	33554432 words	33554432 words	33554432 words
character code	32000000	32000000	32000000	32000000
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-25 °C	-25 °C	-25 °C	-25 °C
organize	32MX16	32MX16	32MX16	32MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	FBGA	FBGA	FBGA	FBGA
Encapsulate equivalent code	BGA60,9X10,32	BGA60,9X10,32	BGA60,9X10,32	BGA60,9X10,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH
power supply	1.8 V	1.8 V	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192
Continuous burst length	2,4,8,16	2,4,8,16	2,4,8,16	2,4,8,16
Maximum standby current	0.000015 A	0.000015 A	0.000015 A	0.000015 A
Maximum slew rate	0.14 mA	0.115 mA	0.14 mA	0.14 mA
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER
Terminal form	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM

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