DDR DRAM, 16MX32, 0.6ns, CMOS, PBGA126, 10. 50 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-126
Parameter Name | Attribute value |
Objectid | 1207932810 |
Parts packaging code | BGA |
package instruction | TFBGA, |
Contacts | 126 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
access mode | FOUR BANK PAGE BURST |
Maximum access time | 0.6 ns |
Other features | AUTO/SELF REFRESH |
JESD-30 code | R-PBGA-B126 |
length | 13.5 mm |
memory density | 536870912 bit |
Memory IC Type | DDR DRAM |
memory width | 32 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 126 |
word count | 16777216 words |
character code | 16000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 16MX32 |
Package body material | PLASTIC/EPOXY |
encapsulated code | TFBGA |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
Maximum seat height | 1.2 mm |
self refresh | YES |
Maximum supply voltage (Vsup) | 1.9 V |
Minimum supply voltage (Vsup) | 1.7 V |
Nominal supply voltage (Vsup) | 1.8 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
width | 10.5 mm |
IS46DR32160C-5BBLA1 | IS43DR32160C-5BBL | |
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Description | DDR DRAM, 16MX32, 0.6ns, CMOS, PBGA126, 10. 50 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-126 | DDR DRAM, 16MX32, 0.6ns, CMOS, PBGA126, 10. 50 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TWBGA-126 |
Objectid | 1207932810 | 1207932766 |
Parts packaging code | BGA | BGA |
package instruction | TFBGA, | TFBGA, |
Contacts | 126 | 126 |
Reach Compliance Code | compliant | compliant |
ECCN code | EAR99 | EAR99 |
access mode | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
Maximum access time | 0.6 ns | 0.6 ns |
Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
JESD-30 code | R-PBGA-B126 | R-PBGA-B126 |
length | 13.5 mm | 13.5 mm |
memory density | 536870912 bit | 536870912 bit |
Memory IC Type | DDR DRAM | DDR DRAM |
memory width | 32 | 32 |
Number of functions | 1 | 1 |
Number of ports | 1 | 1 |
Number of terminals | 126 | 126 |
word count | 16777216 words | 16777216 words |
character code | 16000000 | 16000000 |
Operating mode | SYNCHRONOUS | SYNCHRONOUS |
Maximum operating temperature | 85 °C | 70 °C |
organize | 16MX32 | 16MX32 |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
encapsulated code | TFBGA | TFBGA |
Package shape | RECTANGULAR | RECTANGULAR |
Package form | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
Maximum seat height | 1.2 mm | 1.2 mm |
self refresh | YES | YES |
Maximum supply voltage (Vsup) | 1.9 V | 1.9 V |
Minimum supply voltage (Vsup) | 1.7 V | 1.7 V |
Nominal supply voltage (Vsup) | 1.8 V | 1.8 V |
surface mount | YES | YES |
technology | CMOS | CMOS |
Temperature level | INDUSTRIAL | COMMERCIAL |
Terminal form | BALL | BALL |
Terminal pitch | 0.8 mm | 0.8 mm |
Terminal location | BOTTOM | BOTTOM |
width | 10.5 mm | 10.5 mm |