ES1C datasheet, PDF - EEWORLD Datasheet

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ES1C: Description1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC; Categorysemiconductor Discrete semiconductor; File Size229KB，2 Pages; ManufacturerSHUNYE; Websitehttp://www.shunyegroup.com.cn/

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ES1C Overview

1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC

ES1C Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	SMA, 2 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
terminal coating	MATTE TIN
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Diode component materials	SILICON
Maximum power consumption limit	1.47 W
Diode type	SIGNAL DIODE
Maximum reverse recovery time	0.0150 us
Maximum repetitive peak reverse voltage	150 V
Maximum average forward current	1 A

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ES1A THRU ES1J

SURFACE MOUNT SUPER FAST RECTIFIER

Reverse Voltage -

50 to 600 Volts

DO-214AC

Forward Current -

1.0 Ampere

FEATURES

0.087 (2.21)

0.070 (1.80)

0.110(2.80)

0.100(2.54)

0.177(4.50)

0.157(3.99)

0.012(0.305)

0.006(0.152)

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

For surface mounted applications

Super fast switching for high efficiency

Low reverse leakage

Built-in strain relief,ideal for automated placement

High forward surge current capability

High temperature soldering guaranteed:

250 C/10 seconds at terminals

A

MECHANICAL DATA

0.060(1.52)

0.030(0.76)

0.008(0.203)MAX.

0.222(5.66)

0.194(4.93)

SMA

SMA(H)

A:

0.096(2.42)

0.078(1.98)

0.122(3.12)

0.110(2.82)

Case:

JEDEC DO-214AC molded plastic body

Terminals:

Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity:

Color band denotes cathode end

Mounting Position:

Any

Weight:0.003

ounce, 0.093 grams

0.004 ounce, 0.111 grams SMA(H)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SYMBOLS

ES1A ES1B

ES1C

ES1D ES1E

ES1G

ES1J

UNITS

VOLTS

Amp

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

at T

L

=55 C

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Maximum instantaneous forward voltage at 1.0A

Maximum DC reverse current

T

A

=25 C

at rated DC blocking voltage

T

A

=100 C

Maximum reverse recovery time

(NOTE 1)

Typical junction capacitance (NOTE 2)

Typical thermal resistance (NOTE 3)

Operating junction and storage temperature range

V

RRM

V

RMS

V

DC

I

(AV)

50

35

50

100

70

100

150

105

150

200

140

200

1.0

300

210

300

400

280

400

600

420

600

I

FSM

V

F

I

R

t

rr

C

J

R

q

JA

T

J

,

T

STG

0.95

30.0

1.25

5.0

50.0

35

15.0

60.0

-65 to +150

Amps

Volts

u

A

ns

pF

C/W

C

Note:1.Reverse

recovery condition I

F

=0.5A,I

R

=1.0A,Irr=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

www.shunyegroup.com.cn

ES1C Related Products

	ES1C	ES1A	ES1B	ES1D	ES1E	ES1G	ES1J
Description	1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
Number of terminals	2	2	2	2	-	2	2
Number of components	1	1	1	1	-	1	1
Processing package description	SMA, 2 PIN	Plastic, SMA, 2 PIN	GREEN, PLASTIC, SMA, 2 PIN	Plastic, SMA, 2 PIN	-	Plastic, HSMA, 2 PIN	SMA, 2 PIN
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	-	DISCONTINUED	TRANSFERRED
packaging shape	RECTANGULAR	Rectangle	Rectangle	Rectangle	-	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes	-	Yes	Yes
Terminal form	C BEND	C BEND	C BEND	C BEND	-	C BEND	C BEND
terminal coating	MATTE TIN	-	PURE Tin	PURE Tin	-	tin lead	NOT SPECIFIED
Terminal location	DUAL	pair	pair	pair	-	pair	pair
Packaging Materials	PLASTIC/EPOXY	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	-	Plastic/Epoxy	Plastic/Epoxy
structure	SINGLE	single	single	single	-	single	single
Diode component materials	SILICON	silicon	silicon	silicon	-	silicon	silicon
Diode type	SIGNAL DIODE	Signal diode	Signal diode	Signal diode	-	Signal diode	Signal diode
Maximum reverse recovery time	0.0150 us	0.0200 us	0.0350 us	0.0200 us	-	0.0600 us	0.0600 us
Maximum repetitive peak reverse voltage	150 V	50 V	100 V	200 V	-	400 V	600 V
Maximum average forward current	1 A	1 A	1 A	1 A	-	1 A	1 A

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