BUK455-200A datasheet, PDF - EEWORLD Datasheet

BUK455-200A: DescriptionPowerMOS transistor; CategoryDiscrete semiconductor The transistor; File Size51KB，7 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BUK455-200A Overview

PowerMOS transistor

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
package instruction	,
Reach Compliance Code	unknow
Configuration	Single
Maximum drain current (Abs) (ID)	14 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	125 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)

	BUK455-200A	BUK455-200B
Description	PowerMOS transistor	PowerMOS transistor
Is it Rohs certified?	incompatible	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)	Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code	unknow	unknow
Configuration	Single	Single
Maximum drain current (Abs) (ID)	14 A	13 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	125 W	125 W
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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