JIEJIE MICROELECTRONICS CO. , Ltd
ACJT10 Series
DESCRIPTION:
The ACJT10 series of double mesa technology provide high
interference immunity, They can be used as an static ON/OFF
function in electrical control system, and used as a driver of
low power and high inductance or resistive loads, such as
jet pumps of dishwashers, fans of air-conditioner ...
ACJT10xx-xxA provides insulation voltage rated at 2500V
RMS and ACJT10xx-xxF provides insulation voltage rated at
2000V RMS from all three terminals to external heatsink.
10A TRIACs
Rev.3.0
1 2
3
TO-220A
Insulated
1 2
3
TO-220B
Non-Insulated
MAIN FEATURES
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
10
1000
≤10 or ≤35 or ≤50
Unit
A
1 2
3
TO-220F
Insulated
T2(2)
T1(1)
V
mA
G(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage( T
j
=25℃)
Repetitive peak reverse voltage( T
j
=25℃)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
TO-220A(Ins) (T
C
=90℃)
RMS on-state
current
TO-220B(Non-Ins)
(T
C
=100℃)
TO-220F(Ins) (T
C
=84℃)
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I
2
t value for fusing ( tp=10ms)
TEL
：+86-513-83639777
Symbol
T
stg
T
j
V
DRM
V
RRM
V
DSM
V
RSM
Value
-40-150
-40-125
1000
1000
V
DRM
+100
V
RRM
+100
Unit
℃
℃
V
V
V
V
I
T(RMS)
10
A
I
TSM
I
2
t
- 1 / 5-
100
55
A
A
2
s
http://www.jjwdz.com
ACJT10 Series
Rate of rise of on-state current (I
G
=2×I
GT
)
Peak gate current
Average gate power dissipation
Peak gate power
dI
T
/dt
I
GM
P
G(AV)
P
GM
JieJie Microelectronics CO. , Ltd
50
2
0.1
1
A/μs
A
W
W
ELECTRICAL CHARACTERISTICS
(T
j
=25℃ unless otherwise specified)
Value
Symbol
I
GT
V
GT
V
GD
I
L
I
H
dV/dt
Test Condition
Quadrant
ACJT1010
ACJT1035
ACJT1050
Unit
MAX
MAX
MIN
Ⅰ-Ⅱ-Ⅲ
V
D
=12V R
L
=33Ω
V
D
=V
DRM
T
j
=125℃
R
L
=3.3KΩ
I
G
=1.2I
GT
I
T
=100mA
V
D
=2/3V
DRM
Gate Open
T
j
=125℃
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅲ
Ⅱ
10
1.4
35
1.4
0.2
50
1.5
mA
V
V
20
MAX
70
80
50
1500
80
mA
100
70
2000
mA
V/μs
35
MAX
MIN
20
500
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
I
TM
=14A tp=380μs
V
D
=V
DRM
V
R
=V
RRM
Parameter
T
j
=25℃
T
j
=25℃
T
j
=125℃
Value(MAX)
1.55
10
1.5
Unit
V
μA
mA
THERMAL RESISTANCES
Symbol
Parameter
TO-220A(Ins)
R
th(j-c)
junction to case(AC)
TO-220B(Non-Ins)
TO-220F(Ins)
Value
3.1
2.3
3.5
℃/W
Unit
TEL
：+86-513-83639777
- 2 / 5-
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ACJT10 Series
ORDERING INFORMATION
JieJie Microelectronics CO. , Ltd
AC
AC switch
J
T
Triacs
10
35
-10
F
A:TO-220A(Ins)
F:TO-220F(Ins)
B:TO-220B(Non-Ins)
JieJie Microelectronics Co.,Ltd
I
T(RMS)
:10A
10:V
DRM
/V
RRM
≥1000V
10: I
GT1-3
≤10mA
35: I
GT1-3
≤35mA
50: I
GT1-3
≤50mA
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Min.
Typ.
Max.
4.60
0.88
0.70
1.32
2.72
9.70
10.4
6.95
2.54
28.0
3.75
1.14
2.65
45°
1.70
2.95
0.045
0.104
45°
29.8
1.102
0.148
0.067
0.116
Min.
0.173
0.024
0.018
0.048
0.094
0.339
0.386
0.258
0.1
1.173
Inches
Typ.
Max.
0.181
0.035
0.028
0.052
0.107
0.382
0.409
0.274
E
Φ
M
a
x3
m
.8
m
A
C2
F
A
B
C
C2
C3
D
E
4.40
0.61
0.46
1.21
2.40
8.60
9.80
6.55
L3
H
D
L1
C3
L2
V1
F
G
H
L1
B
G
C
L2
L3
TO-220A Ins
V1
TEL
：+86-513-83639777
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ACJT10 Series
PACKAGE MECHANICAL DATA
JieJie Microelectronics CO. , Ltd
Dimensions
Ref.
Millimeters
Min.
Typ.
Max.
4.60
0.88
0.70
1.32
2.72
9.70
10.4
6.60
2.54
28.0
3.75
1.14
2.65
45°
1.70
2.95
0.045
0.104
45°
29.8
1.102
0.148
0.067
0.116
Min.
0.173
0.024
0.018
0.048
0.094
0.339
0.378
0.244
0.1
1.173
Inches
Typ.
Max.
0.181
0.035
0.028
0.052
0.107
0.382
0.409
0.260
E
Φ
x
Ma
m
.8m
3
C2
A
A
B
C
4.40
0.61
0.46
1.21
2.40
8.60
9.60
6.20
L3
F
C2
C3
V1
D
D
E
H
JIE
L1
C3
L2
F
G
H
L1
B
G
C
L2
L3
V1
TO-220B Non-Ins
Dimensions
Ref.
Millimeters
Min.
A
4.40
0.74
0.48
2.40
2.60
8.80
9.70
6.40
2.54
28.0
3.63
1.14
3.30
45°
1.70
0.045
0.130
45°
29.8
1.102
0.143
0.067
0.80
Typ.
Max.
4.80
0.83
0.75
2.70
3.00
9.30
10.3
7.00
Min.
0.173
0.029
0.019
0.094
0.102
0.346
0.382
0.252
0.1
1.173
0.031
Inches
Typ.
Max.
0.189
0.033
0.030
0.106
0.118
0.366
0.406
0.276
E
Φ
M
ax
m
.5
3
m
A
C2
B
C
L3
F
C2
C3
H
D
V1
D
E
L1
C3
L2
F
G
H
B
G
C
L1
L2
L3
TO-220F Ins
V1
TEL
：+86-513-83639777
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ACJT10 Series
FIG.1
Maximum power dissipation versus RMS
on-state current
P(w)
15
JieJie Microelectronics CO. , Ltd
FIG.2:
RMS on-state current versus case
temperature
I
T(RMS)
(A)
12
10
α=180°
TO-220B(Non-Ins)
10
8
6
TO-220A(Ins)
5
4
2
TO-220F(Ins)
0
0
I
T(RMS)
(A)
2
4
6
8
10
0
0
Tc (℃)
25
50
75
100
125
FIG.3:
Surge peak on-state current versus
number of cycles
I
TSM
(A)
105
t=20ms
FIG.4:
On-state characteristics (maximum
values)
I
TM
(A)
24
90
75
60
One cycle
18
12
45
30
15
0
1
10
Number of cycles
100
1000
0
0
0.5
1.0
1.5
V
TM
(V)
2.0
2.5
6
Tj=125℃
Tj=25℃
FIG.5:
Relative variations of gate trigger current
versus junction temperature
I
GT
(Tj) /I
GT
(Tj=25℃)
3.0
2.5
2.0
I
GT3
FIG.6:
Relative variations of holding current,
latching curretn versus junction temperature
I
H
,I
L
(Tj) /I
H
,I
L
(Tj=25℃)
3.0
2.5
2.0
1.5
1.0
0.5
I
L
I
H
1.5 I
GT1
&I
GT2
1.0
0.5
0.0
-40
Tj (℃)
-20
0
20
40
60
80
100
120
140
0.0
-40
Tj (℃)
-20
0
20
40
60
80
100
120
140
Information furnished in this document is believed to be accurate and reliable. However, Jiangsu
JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without
consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when
an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu
JieJie assumes no responsibility for any infringement of other rights of third parties which may
result from the use of such products and information.
This document is the third version which is made in 12-June-2015. This document supersedes
and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright
©
2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
TEL
：+86-513-83639777
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http://www.jjwdz.com
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