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V827565N24SBJZ-D3

Description
Synchronous DRAM Module, 128MX72, 0.7ns, CMOS, PDMA184
Categorystorage    storage   
File Size243KB,16 Pages
ManufacturerProMOS Technologies Inc
Download Datasheet Parametric View All

V827565N24SBJZ-D3 Overview

Synchronous DRAM Module, 128MX72, 0.7ns, CMOS, PDMA184

V827565N24SBJZ-D3 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1125506626
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time0.7 ns
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
JESD-30 codeR-PDMA-N184
memory density9663676416 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width72
Number of terminals184
word count134217728 words
character code128000000
Maximum operating temperature70 °C
Minimum operating temperature
organize128MX72
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIMM
Encapsulate equivalent codeDIMM184
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5 V
Certification statusNot Qualified
refresh cycle8192
Maximum standby current0.18 A
Maximum slew rate6.48 mA
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
V827565N24SB
1GB 184-PIN DDR REGISTERED ECC DIMM
128M x 72
Features
184 Pin Registered 134,217,728 x 72 bit
Organization DDR SDRAM Modules
Utilizes High Performance 128M x 4 DDR
SDRAM in TSOPII and FBGA Package
Single +2.5V (± 0.2V) Power Supply
Single +2.6V (± 0.1V) Power Supply for DDR400
Programmable CAS Latency, Burst Length, and
Wrap Sequence (Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
All Inputs, Outputs are SSTL-2 Compatible
8192 Refresh Cycles every 64 ms
Serial Presence Detect (SPD)
DDR SDRAM Performance
Component Used
-6
-7
Module Speed
t
CK
t
AC
Description
The V827565N24SB memory module is
organized 134,217,728 x 72 bits in a 184 pin
memory module. The 128M x 72 memory module
uses 18 ProMOS 128M x 4 DDR SDRAM. The x72
modules are ideal for use in high performance
computer systems where increased memory
density and fast access times are required.
-75
-8
D3
(PC400B)
C0
166
(PC333)
B0
133
(PC266B)
Units
MHz
ns
ns
CLK
CLK
Clock Frequency
166
143
133
125
Clock Frequency (max.)
(PC266A) (PC266B)
200
(PC333)
(PC200)
(max.)
Clock Access Time
6
7
7.5
Clock Cycle Time CAS Latency = 3
t
CK
CAS Latency = 2.5
Clock Cycle Time CAS Latency = 2.5
t
RCD
tRCD parameter
5
6
3
3
8
-
6
3
3
-
7.5
3
3
Module Speed
tRP parameter
A1 t
RP
PC1600 (100MHz @ CL2)
B0
B1
C0
PC2100B (133MHz @ CL2.5)
PC2100A (133MHz @ CL2)
PC2700 (166MHz @ CL2.5)
V827565N24SB Rev. 1.0 October 2005
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