V826765G24SBSG-D3 datasheet, PDF

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V826765G24SBSG-D3: DescriptionCache DRAM Module, 128MX64, 0.65ns, CMOS, PDMA200; Categorystorage storage; File Size176KB，14 Pages; ManufacturerProMOS Technologies Inc

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V826765G24SBSG-D3 Overview

Cache DRAM Module, 128MX64, 0.65ns, CMOS, PDMA200

V826765G24SBSG-D3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1126060306
package instruction	DIMM, DIMM200,24
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	0.65 ns
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
JESD-30 code	R-PDMA-N200
JESD-609 code	e4
memory density	8589934592 bit
Memory IC Type	CACHE DRAM MODULE
memory width	64
Number of terminals	200
word count	134217728 words
character code	128000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128MX64
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIMM
Encapsulate equivalent code	DIMM200,24
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.6 V
Certification status	Not Qualified
refresh cycle	8192
Maximum standby current	0.16 A
Maximum slew rate	3.36 mA
Nominal supply voltage (Vsup)	2.6 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Gold (Au)
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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V826765G24SB

1GB 200-PIN DDR UNBUFFERED SODIMM

128M x 64

Features

■

JEDEC 200 Pin DDR Unbuffered Small-Outline,

Dual In-Line memory module (SODIMM);

134,217,728 x 64 bit organization.

■

Utilizes High Performance 64M x 8 DDR

SDRAM in FBGA Packages

■

Single +2.5V (± 0.2V) Power Supply

■

Single +2.6V (± 0.1V) Power Supply for DDR400

■

Programmable CAS Latency, Burst Length, and

Wrap Sequence (Sequential & Interleave)

■

Auto Refresh (CBR) and Self Refresh

■

All Inputs, Outputs are SSTL-2 Compatible

■

8192 Refresh Cycles every 64 ms

■

Serial Presence Detect (SPD)

■

Module Speed

200

(PC400B)

Description

The V826765G24SB memory module is

organized 134,217,728 x 64 bits in a 200 pin

memory module. The 128M x 64 memory module

uses 16 ProMOS 64M x 8 DDR SDRAM. The x64

modules are ideal for use in high performance

computer systems where increased memory

density and fast access times are required.

166

(PC333)

Units

MHz

CLK

Clock Frequency (max.)

PC1600 (100MHz @ CL2)

B0 t PC2100B (133MHz @ CL2.5)

Clock Cycle Time CAS Latency = 3

PC2100A (133MHz @ CL2)

Clock Cycle Time CAS Latency = 2.5

PC2700 (166MHz @ CL2.5)

tRCD parameter

RCD

tRP parameter

V826765G24SB Rev. 1.1 April 2006

V826765G24SBSG-D3 Related Products

	V826765G24SBSG-D3	V826765G24SBJW-C0	V826765G24SBJW-D3	V826765G24SBSG-C0	V826765G24SBSL-C0
Description	Cache DRAM Module, 128MX64, 0.65ns, CMOS, PDMA200	DDR DRAM Module, 128MX64, 0.7ns, CMOS, GREEN, SODIMM-200	DDR DRAM Module, 128MX64, 0.7ns, CMOS, GREEN, SODIMM-200	Cache DRAM Module, 128MX64, 0.7ns, CMOS, PDMA200	Cache DRAM Module, 128MX64, 0.7ns, CMOS, PDMA200
Is it Rohs certified?	incompatible	conform to	conform to	incompatible	incompatible
package instruction	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	0.65 ns	0.7 ns	0.7 ns	0.7 ns	0.7 ns
Maximum clock frequency (fCLK)	200 MHz	166 MHz	200 MHz	166 MHz	166 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDMA-N200	R-XZMA-N200	R-XZMA-N200	R-PDMA-N200	R-PDMA-N200
memory density	8589934592 bit	8589934592 bit	8589934592 bit	8589934592 bit	8589934592 bit
Memory IC Type	CACHE DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	CACHE DRAM MODULE	CACHE DRAM MODULE
memory width	64	64	64	64	64
Number of terminals	200	200	200	200	200
word count	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words
character code	128000000	128000000	128000000	128000000	128000000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C
organize	128MX64	128MX64	128MX64	128MX64	128MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	UNSPECIFIED	UNSPECIFIED	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	2.6 V	2.5 V	2.6 V	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192
Maximum standby current	0.16 A	0.16 A	0.16 A	0.16 A	0.16 A
Maximum slew rate	3.36 mA	3.28 mA	3.36 mA	3.28 mA	3.28 mA
Nominal supply voltage (Vsup)	2.6 V	2.5 V	2.6 V	2.5 V	2.5 V
surface mount	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm
Terminal location	DUAL	ZIG-ZAG	ZIG-ZAG	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Is it lead-free?	Contains lead	-	-	Contains lead	Contains lead
Objectid	1126060306	-	-	1126060305	1126060307
JESD-609 code	e4	e4	e4	e4	-
Terminal surface	Gold (Au)	Gold (Au)	Gold (Au)	Gold (Au)	-

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