P215CH06EM0 datasheet, PDF - EEWORLD Datasheet

P215CH06EM0: DescriptionSilicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),650A I(T),TO-200AB; CategoryAnalog mixed-signal IC Trigger device; File Size304KB，4 Pages; ManufacturerIXYS

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Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),650A I(T),TO-200AB

Parameter Name	Attribute value
Objectid	1207505591
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
Nominal circuit commutation break time	12 µs
Critical rise rate of minimum off-state voltage	100 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	600 mA
Maximum leakage current	30 mA
On-state non-repetitive peak current	5000 A
Maximum on-state current	650000 A
Off-state repetitive peak voltage	600 V
surface mount	NO
Trigger device type	SCR

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