BU323A datasheet, PDF - EEWORLD Datasheet

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BU323A: Description16 AMPERE PEAK POWER TRANSISTOR DARLINGTON NPN SILICON 400 VOLTS 175 WATTS; CategoryDiscrete semiconductor The transistor; File Size128KB，6 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

Download Datasheet Parametric View All

BU323A Overview

16 AMPERE PEAK POWER TRANSISTOR DARLINGTON NPN SILICON 400 VOLTS 175 WATTS

BU323A Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknow
Shell connection	COLLECTOR
Maximum collector current (IC)	10 A
Collector-based maximum capacity	350 pF
Collector-emitter maximum voltage	400 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	50
JEDEC-95 code	TO-204AA
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	175 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	30000 ns
VCEsat-Max	2.7 V

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(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

©

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

•

VCE Sat Specified at –40

_

C = 2.0 V Max. at IC = 6 A.

•

Photoglass Passivation for Reliability and Stability.

The BU323A is a monolithic darlington transistor designed for automotive ignition,

switching regulator and motor control applications.

NPN Silicon Power Darlington

Transistor

SEMICONDUCTOR TECHNICAL DATA

MOTOROLA

THERMAL CHARACTERISTICS

MAXIMUM RATINGS

REV 7

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

Thermal Resistance, Junction to Case

Operating and Storage Junction

Total Power Dissipation @ TC = 25

_

C

@ TC = 100

_

C

Derate above 25

_

C

Base Current — Continuous

Collector Current — Continuous

Peak (1)

Emitter–Base Voltage

Collector–Base Voltage

Collector–Emitter Voltage

Characteristic

Rating

v

10%.

BASE

≈

1k

VCEO(sus)

Symbol

Symbol

TJ, Tstg

VCBO

VEBO

R

θJC

PD

TL

IC

IB

COLLECTOR

≈

30

EMITTER

– 65 to + 200

Value

Max

275

175

100

1.0

600

400

1.0

3.0

8.0

10

16

16 AMPERE PEAK

POWER TRANSISTOR

DARLINGTON NPN

SILICON

400 VOLTS

175 WATTS

BU323A

Order this document

by BU323A/D

CASE 1–07

TO–204AA

(TO–3)

Watts

Watts

W/

_

C

_

C/W

Unit

Unit

3–231

Adc

Adc

Vdc

Vdc

Vdc

_

C

_

C

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