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SG2803

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size106KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

SG2803 Overview

POWER TRANSISTOR

SG2803 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeuniversal power supply
SG2800 SERIES
HIGH VOLTAGE MEDIUM
CURRENT DRIVER ARRAYS
DESCRIPTION
The SG2800 series integrates eight NPN Darlington pairs with
internal suppression diodes to drive lamps, relays, and solenoids in
many military, aerospace, and industrial applications that require
severe environments. All units feature open collector outputs with
greater than 50V breakdown voltages combined with 500mA
current carrying capabilities. Five different input configurations
provide optimized designs for interfacing with DTL, TTL, PMOS, or
CMOS drive signals. These devices are designed to operate from
-55°C to 125°C ambient temperature in a 18-pin dual in-line
ceramic (J) package and 20-pin leadless chip carrier (LCC).
FEATURES
Eight NPN Darlington pairs
Collector currents to 600mA
Output voltages from 50V to 95V
Internal clamping diodes for inductive loads
DTL, TTL, PMOS, or CMOS compatible inputs
Hermetic ceramic package
HIGH RELIABILITY FEATURES
Available to MIL-STD-883 and DESC SMD
MIL-M38510/14106BVA - JAN2801J
MIL-M38510/14107BVA - JAN2802J
MIL-M38510/14108BVA - JAN2803J
MIL-M38510/14109BVA - JAN2804J
Radiation data available
LMI level "S" processing available
PARTIAL SCHEMATICS
4/90 Rev 1.5 11/97
Copyright
©
1997
1
11861 Western Avenue
Garden Grove, CA 92841
(714) 898-8121
FAX: (714) 893-2570
L
INFINITY
Microelectronics Inc.

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