SGL40N150
IGBT
SGL40N150
General Description
Fairchild’s Insulated Gate Bipolar Transistor
(IGBT)
provides low conduction and switching losses.
The SGL40N150 is designed for induction heating
applications.
Features
• High speed switching
• Low saturation voltage : V
CE(sat)
= 3.7 V @ I
C
= 40A
• High input impedance
Applications
Home appliances, induction heaters, IH JAR, and microwave ovens.
C
G
TO-264
G
C
E
T
C
= 25°C unless otherwise noted
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGL40N150
1500
±
25
40
20
120
200
80
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
0.625
25
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGL40N150 Rev. A1
SGL40N150
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
1500
--
--
--
--
--
--
250
± 100
V
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 40mA, V
CE
= V
GE
I
C
= 40A
,
V
GE
= 15V
3.5
--
5.0
3.7
7.5
4.7
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 10V
,
V
GE
= 0V,
f = 1MHz
--
--
--
4000
700
300
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CC
= 600V, I
C
= 40A,
R
G
= 51Ω, V
GE
= 15V,
Resistive Load, T
C
= 25°C
V
CE
= 600V, I
C
= 40A,
V
GE
= 15V
--
--
--
--
--
--
--
90
230
245
230
140
25
45
200
700
400
400
170
25
60
ns
ns
ns
ns
nC
nC
nC
©2002 Fairchild Semiconductor Corporation
SGL40N150 Rev. A1
SGL40N150
100
Common Emitter
80
T
C
= 25 C
o
120
20V
10V
100
Common Emitter
V
GE
= 15V
T
C
= 25 C
T
C
= 125 C
o
o
Collector Current, I
C
[A]
8
Collector Current, I
C
[A]
15V
12V
80
60
V
GE
= 8V
60
40
40
20
20
0
0
2
4
6
0
0
2
4
6
8
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
6
Common Emitter
V
GE
= 15V
Collector - Emitter Voltage, V [V]
CE
5
I
C
= 80A
6000
Common Emitter
V
GE
=0V, f=1MHz
T
C
=25 C
C
ies
o
5000
4
I
C
= 40A
3
I
C
= 20A
2
Capacitance [pF]
4000
3000
2000
C
oes
C
res
1000
1
25
50
75
100
o
0
125
1
10
Case Temperature, T
C
[ C]
Collector - Emitter Voltage, V
CE
[V]
Fig 3. Collector to Emitter Saturation
Voltage vs. Case Temperature
Fig 4. Typical Capacitance vs.
Collector to Emitter Voltage
20
Common Emitter
T
C
= 25 C
16
o
20
Common Emitter
T
C
= 125 C
16
0
Collector - Emitter Voltage, V
CE
[V]
12
Collector - Emitter Voltage, V
CE
[V]
12
8
80A
40A
4
20A
8
80A
40A
4
20A
0
0
4
8
12
16
20
0
0
4
8
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
SGL40N150 Rev. A1
SGL40N150
1000
Common Emitter
V
GE
=
±
15V, R
G
= 51
Ω
T
C
= 25 C
T
C
= 125 C
o
o
1000
Common Emitter
V
GE
=
±
15V, R
G
= 51
Ω
T
C
= 25 C
T
C
= 125 C
o
o
Switching Time [ns]
Switching Time [ns]
td(on)
tf
td(off)
100
tr
tf
100
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
90
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 7. Turn-Off Characteristics vs.
Collector Current
Fig 8. Turn-On Characteristics vs.
Collector Current
Common Emitter
V
G E
=
±
15V, R
G
= 51
Ω
T
C
= 25 C
10000
T
C
= 125 C
o
o
1000
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25 C
o
o
Switching Loss [
µ
J]
Switching Time [ns]
T
C
= 125 C
tf
Eoff
1000
Eoff
Eon
tf
td(off)
100
100
10
20
30
40
50
60
70
80
90
10
100
Collector Current, I
C
[A]
Gate Resistance, R
G
[
Ω
]
Fig 9. Switching Loss vs. Collector Current
Fig 10. Turn-Off Characteristics vs.
Gate Resistance
1000
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25 C
o
10000
Common Emitter
V
CC
= 600V, V
GE
=
±
15V
I
C
= 40A
T
C
= 25 C
o
o
Switching Time [ns]
Switching Loss [
µ
J]
T
C
= 125 C
o
T
C
= 125 C
Eoff
tr
100
td(on)
Eoff
Eon
1000
Eon
10
10
100
10
100
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 11. Turn-On Characteristics vs.
Gate Resistance
©2002 Fairchild Semiconductor Corporation
Fig 12. Switching Loss vs. Gate Resistance
SGL40N150 Rev. A1
SGL40N150
14
Common Emitter
R
L
= 15
Ω
, V
CC
= 600V
T
C
= 25 C
o
100
I
C
MAX (Pulsed)
I
C
MAX (Continuous)
100
µ
s
50
µ
s
Gate - Emitter Voltage, V
GE
[V]
12
10
8
6
4
2
0
0
Collector Current, I
C
[A]
10
1ms
DC Operation
1
Single Nonrepetitive
0.1
Pulse T
C
= 25 C
Curves must be derated
linearly with increase
in temperature
0.1
1
10
100
1000
o
0.01
25
50
75
100
125
150
Gate Charge, Qg [nC]
Collector - Emitter Voltage, V
CE
[V]
Fig 13. Gate Charge Characteristics
Fig 14. SOA Characteristics
©2002 Fairchild Semiconductor Corporation
SGL40N150 Rev. A1
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