Due.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
TIP29, TIP29A, TIP29B, TIP29C
NPN SILICON POWER TRANSISTORS
Designed for Complementary Use with the
TIP30 Series
30 W at 25°C Case Temperature
1 A Continuous Collector Current
3 A Peak Collector Current
Customer-Specified Selections Available
TO-220 P/ICKAGE
(TOPV
IEW)
1
2
3
o
VALUE
UNIT
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings at
25°C
case temperature (unless otherwise noted)
RATING
TIP29
TIP29A
TIP29B
TIP29C
TIP29
Collector-emitter voltage (I
B
= 0)
TIP29A
TIP29B
TIP29C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1 )
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Undamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 1 0 seconds
NOTES: 1.
2.
3.
4.
VEBO
VCEO
V
CBO
SYMBOL
Collector-base voltage (I
E
= 0)
80
100
120
140
40
60
80
100
5
1
3
0.4
30
2
32
V
V
V
A
A
A
W
W
Ic
ICM
IB
Plot
Plot
VJL^
Tj
T
stg
T
L
-65to+150
-65to+150
250
mj
°C
°C
"C
This value applies for t
p
< 0.3 ms, duty cycle < 10%.
Derate linearly to 1 50°C case temperature at the rate of 0.24 W/°C.
Derate linearly to 1 50°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, l
B(on)
= 0.4 A, R
BE
= 100
fi
V
BE(off)
= 0, R
s
= 0.10,
20V
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
TIP29, TIP29A, TIP29B, TIP29C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
(BR)CEO
breakdown V0
|t
a
g
e
TEST CONDITIONS
TIP29
TIP29A
J|p29B
T|p2gc
WIN
40
60
80
100
TYP
MAX
UNIT
> C = 30 mA
(see Note 5)
V
CE
=
V
CE
=
V
CE
=
V
CE
=
80V
100V
120V
140 V
,
B
= 0
V
CES
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
l
c
= 0
!c = °'?A
l
c
=
|
C
=
1A
1A
TIP29
TIP29A
TIP29B
TIP29C
TIP29/29A
TIP29B/29C
0.2
0.2
0.2
0.2
0.3
0.3
1
mA
|CEO
V
C E
= 30V
V
CE
= 60 V
V
EB
=
Vc!=
5V
4V
mA
mA
'
EBO
hpc
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
f=1kHz
f = 1 MHz
40
15
75
0.7
I
B
= 125mA
V
CE
=
4V
V
V
CE(sat>
1.3
20
3
BE
h
fp
hf
p
V
C E
= 10V
V
C E
= 10V
I
C
= 0.2A
I
0
= 0.2A
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 us, duty cycle < 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
9JC
R
eJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
4.17
62.5
°c/w
°c/w
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
Turn-on time
Turn-off time
lc=
1A
V
B
E(off) = -4.3 V
TEST CONDITIONS t
lB(on) = 0.1A
R
L
= 30 0
l
B
<off) = -0-1 A
t
p
= 20 us, dc < 2%
MIN
TYP
0.5
2
MAX
UNIT
us
us
t
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
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