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SI4431DY

Description
6300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size92KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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SI4431DY Overview

6300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

SI4431DY Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSOT
package instructionSOIC-8
Contacts8
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)6.3 A
Maximum drain current (ID)6.3 A
Maximum drain-source on-resistance0.032 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Si4431DY
January 2001
Si4431DY
P-Channel Logic Level PowerTrench
MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor's
advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
–6.3 A, –30 V. R
DS(ON)
= 0.032
@ V
GS
= -10 V
R
DS(ON)
= 0.05
@ V
GS
= -4.5 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
Applications
DC/DC converter
Load switch
Motor Drive
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
–30
±20
(Note 1a)
Units
V
V
A
W
-6.3
-40
2.5
1.2
1.0
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
4431
Device
Si4431DY
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2001
Fairchild Semiconductor International
Si4431DY Rev A

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SI4431DY SI4431
Description 6300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 6300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of components 1 1
Number of terminals 8 8
surface mount YES Yes
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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