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MBRP20035L

Description
Schottky Power Rectifier
CategoryDiscrete semiconductor    diode   
File Size112KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MBRP20035L Overview

Schottky Power Rectifier

MBRP20035L Parametric

Parameter NameAttribute value
MakerON Semiconductor
package instructionR-PUFM-X1
Contacts2
Manufacturer packaging codeCASE 357D-01
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationPOWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.57 V
JESD-30 codeR-PUFM-X1
Maximum non-repetitive peak forward current2000 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Maximum output current200 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage35 V
surface mountNO
technologySCHOTTKY
Terminal formUNSPECIFIED
Terminal locationUPPER
MBRP20035L
SWITCHMODE™
Schottky Power Rectifier
POWERTAPE III Package
. . . employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency switching
power supplies, free wheeling diode and polarity protection diodes.
http://onsemi.com
Very Low Forward Voltage Drop
Highly Stable Oxide Passivated Junction
Guardring for Stress Protection
High dv/dt Capability
SCHOTTKY
BARRIER RECTIFIER
200 AMPERES
35 VOLTS
Mechanical Characteristics:
Dual Die Construction
Case: Epoxy, Molded with Plated Copper Heatsink Base
Weight: 40 grams (approximately)
Finish: All External Surfaces Corrosion Resistant
Base Plate Torques: See procedure given in the
Package Outline Section
Top Terminal Torque: 25−40 lb−in max.
Shipped 50 units per foam
Marking: MBRP20035L
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V
R
, T
C
= 100°C)
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave,
20 kHz, T
C
= 100°C)
Non−Repetitive Peak Surge Current
(Surge applied at rated load
conditions, halfwave, single phase,
60 Hz)
Peak Repetitive Reverse Surge
Current (2.0
μs,
1.0 kHz)
Storage/Operating Case
Temperature Range
Operating Junction Temperature
Voltage Rate of Change
(Rated V
R
, T
J
= 25°C)
Symbol
V
RRM
V
RWM
V
R
I
O
I
FRM
Value
35
Unit
V
1
2
1
2
POWERTAP III
CASE 357D
PLASTIC
MARKING DIAGRAM
200
400
A
MBRP20035L
A
MBRP20035L = Device Code
I
FSM
2000
A
ORDERING INFORMATION
I
RRM
T
stg
, T
C
T
J
dv/dt
2.0
*55
to +150
*55
to +150
10,000
A
°C
°C
V/μs
Device
MBRP20035L
Package
POWERTAP III
Shipping
50 Units/Foam
©
Semiconductor Components Industries, LLC, 2006
September, 2006
Rev. 2
1
Publication Order Number:
MBRP20035L/D

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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