IRF7702TR datasheet, PDF - EEWORLD Datasheet

IRF7702TR: DescriptionUltra Low On-Resistance; CategoryDiscrete semiconductor The transistor; File Size156KB，9 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRF7702TR Overview

Ultra Low On-Resistance

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TSSOP
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	12 V
Maximum drain current (ID)	8 A
Maximum drain-source on-resistance	0.014 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	MO-153AA
JESD-30 code	R-PDSO-G8
JESD-609 code	e0
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	70 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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