JMnic
Product Specification
Silicon PNP Power Transistors
2SA1064
DESCRIPTION
・With
TO-3 package
・Low
collector saturation voltage
・Complement
to type 2SC2488
・High
transition frequency
APPLICATIONS
・For
audio frequency amplifier and high
power amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-150
-150
-5
-8
-12
100
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1064
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-0.1A ;I
B
=0
-150
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-8A ;I
B
=-0.8A
-2.0
V
V
BE
Base-emitter on voltage
I
C
=-8A;V
CE
=-5V
-2.5
V
I
CBO
Collector cut-off current
V
CB
=-70V; I
E
=0
-1
mA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-2
mA
h
FE-1
DC current gain
I
C
=-1A ; V
CE
=-5V
40
280
h
FE-2
DC current gain
I
C
=-8A ; V
CE
=-5V
20
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-5V
50
MHz
h
FE-1
Classifications
R
40-80
Q
60-120
P
90-180
O
140-280
2
Microcontroller MCU
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